A systematic approach to the design of the conducted electromagnetic interference （EMI） filter of high-density plasma cutting power supply has been developed. Converter components have been accurately modeled, with ...A systematic approach to the design of the conducted electromagnetic interference （EMI） filter of high-density plasma cutting power supply has been developed. Converter components have been accurately modeled, with parasitic elements extracted to reveal their impacts on the EMI noises. Circuit simulations have been used to analyze and minimize the EMI noises. Conducted EMI noise measurement and filter design of this power supply have been achieved which successfully satisfy the FCC class B limits in the frequency range from 150 kHz to 30 MHz. The analyses and experimental results show that the designed filter guarantees that the required attenuation will be achieved.展开更多
Shandong Development and Reform Commission recently announced in a documen that based on the enterprise self-inspection and provincial inspection results,it had ordered Shandong Weiqiao Pioneering Group and Xinfa Grou...Shandong Development and Reform Commission recently announced in a documen that based on the enterprise self-inspection and provincial inspection results,it had ordered Shandong Weiqiao Pioneering Group and Xinfa Group to close 3.21 million tons o illegal aluminum production capacity by the end of July.Besides Shandong,other provinces and regions with high aluminum展开更多
In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaA...In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.展开更多
基金National Natural Science Foundation of China (No. 50477009)
文摘A systematic approach to the design of the conducted electromagnetic interference （EMI） filter of high-density plasma cutting power supply has been developed. Converter components have been accurately modeled, with parasitic elements extracted to reveal their impacts on the EMI noises. Circuit simulations have been used to analyze and minimize the EMI noises. Conducted EMI noise measurement and filter design of this power supply have been achieved which successfully satisfy the FCC class B limits in the frequency range from 150 kHz to 30 MHz. The analyses and experimental results show that the designed filter guarantees that the required attenuation will be achieved.
文摘Shandong Development and Reform Commission recently announced in a documen that based on the enterprise self-inspection and provincial inspection results,it had ordered Shandong Weiqiao Pioneering Group and Xinfa Group to close 3.21 million tons o illegal aluminum production capacity by the end of July.Besides Shandong,other provinces and regions with high aluminum
文摘In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.
