In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaA...In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.展开更多
文摘In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.
