This paper presents an approach for oscillation damping with an integrated multi-stage linear quadratic regulator(MSLQR)FACTS controller combining power oscillation damping(POD)capabilities.The particle swarm optimiz...This paper presents an approach for oscillation damping with an integrated multi-stage linear quadratic regulator(MSLQR)FACTS controller combining power oscillation damping(POD)capabilities.The particle swarm optimization(PSO)technique has been used for precise tuning initial control parameters of power system stabilizers(PSS)and FACTS devices(such as STATCOM and UPFC)which results in improved controller performance.It is observed that the proposed control structure damps the oscillations adequately and is modular in design methodology.The sample power system comprising six areas is considered to demonstrate the effectiveness of the proposed concept.The states inter-relation which is shown with eigenvalues reflects better regulation with the proposed controller.The step response also validates the controller performance.展开更多
A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage ga...A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.展开更多
A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to ...A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.展开更多
文摘This paper presents an approach for oscillation damping with an integrated multi-stage linear quadratic regulator(MSLQR)FACTS controller combining power oscillation damping(POD)capabilities.The particle swarm optimization(PSO)technique has been used for precise tuning initial control parameters of power system stabilizers(PSS)and FACTS devices(such as STATCOM and UPFC)which results in improved controller performance.It is observed that the proposed control structure damps the oscillations adequately and is modular in design methodology.The sample power system comprising six areas is considered to demonstrate the effectiveness of the proposed concept.The states inter-relation which is shown with eigenvalues reflects better regulation with the proposed controller.The step response also validates the controller performance.
基金Project supported by the National Science and Technology Major Project of China(No.2011ZX03004-002-01)
文摘A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.
文摘A double silicon on insulator（DSOI） structure was introduced based on fully depleted SOI（FDSOI）technology.The circuit performance could be adjusted dynamically through the separate back gate electrodes applied to N-channel and P-channel devices.Based on DSOI ring oscillator（OSC）,this paper focused on the theoretical analysis and electrical test of how the OSC＇s frequency being influenced by the back gate electrodes（soi2n,soi2p）.The testing results showed that the frequency and power consumption of OSC could change nearly linearly along with the back gate bias.According to the different requirements of the circuit designers,the circuit performance could be improved by positive soi2 n and negative soi2 p,and the power consumption could be reduced by negative soi2n and positive soi2p.The best compromise between performance and power consumption of the circuit could be achieved by appropriate back gate biasing.
