Utilization of Micro Hydro Power Plant at the Gunung Halu case study type run-off the river is a household use only in the afternoon,around 5 pm until bedtime at about 10 pm.Therefore,more than 75%of the energy is los...Utilization of Micro Hydro Power Plant at the Gunung Halu case study type run-off the river is a household use only in the afternoon,around 5 pm until bedtime at about 10 pm.Therefore,more than 75%of the energy is lost.This case study lost power which can be used as a by-product,such as for drying coffee beans.In this case study,a design was carried out to obtain by-products and improve power quality in the electrical system.In addition,they complain about the poor quality of power controlled by frequency using Triac-Based Electronic Dummy Load Control.The heat from the dummy load in the case study is used as a by-product.MHP with a minimum power of 20 kW,and the usage time of customer service is about 6 h.The energy for the by-products is about 360 kWh/day,and the power quality improved by using Triac-Based Electronic Load Control and Hysteresis Current Control for the active filter.As a result,the power factor is close to one,the generator current harmonics is less than 2%,and the voltage harmonics is less than 5%.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correl...A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...展开更多
A model for the definition of electrical Power is presented, which retrieves the concepts of homomorphism from the geometrical tensor approximation at the wavelet approach. Their definition here is nevertheless differ...A model for the definition of electrical Power is presented, which retrieves the concepts of homomorphism from the geometrical tensor approximation at the wavelet approach. Their definition here is nevertheless different in that it considers both tensor algebra and wavelet operators, solving thus most of the problems usually associated with the numerical methods.展开更多
A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control ...A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.展开更多
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gat...In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.展开更多
应用半导体技术的固态功率放大器具有体积小和稳定性高等优点,在很多微波应用中取代了传统的真空器件行波管。在所有类型半导体材料中,第三代半导体材料GaN(Gallium Nitride)因为具有宽禁带、高电子迁移率和高击穿电压等优势,被广泛应...应用半导体技术的固态功率放大器具有体积小和稳定性高等优点,在很多微波应用中取代了传统的真空器件行波管。在所有类型半导体材料中,第三代半导体材料GaN(Gallium Nitride)因为具有宽禁带、高电子迁移率和高击穿电压等优势,被广泛应用于功率放大器。基于功率放大器的发展,文中阐述了固态功率放大器的发展历史,总结了GaN技术与其他半导体技术性能的比较,并着重介绍了应用GaN HEMT(GaN High Electron Mobility Transistor)技术的功率放大器。讨论了GaN HEMT功率放大器的各种类型,包括A类、B类、C类、D类和E类等,介绍了应用于GaN功率放大器的效率和线性度提高技术,包括Doherty功率放大器和包络跟踪技术,以及数字预失真技术等,并就相关技术做了总结和对比。展开更多
The AC electric arc furnace(EAF)is becoming a core apparatus of the modern steel industry.Nevertheless,it used to be a major threat of power quality in the traditional power supply system.In this paper,a flexible powe...The AC electric arc furnace(EAF)is becoming a core apparatus of the modern steel industry.Nevertheless,it used to be a major threat of power quality in the traditional power supply system.In this paper,a flexible power supply system of the AC EAF is proposed,which is expected to completely alter its inherent cognition of impact load in the power grid.The basics of the power supply for EAF are first reviewed and the novel techniques to enhance the operation flexibility of EAF are introduced.The power circuit and the control structure are then presented,followed by the detailed strategies of various operations fully considering the features of EAF.A large disturbance stability criterion based on the mixed potential theory is also established for the practical application.Both electromagnetic transient simulations using PSCAD and benefit analyses verify the feasibility of the proposed system.展开更多
基金This research was funded by Politeknik Negeri Bandung for funding this research in the 2021 budget year through a grant for applied research,Number B/78.14/PL1.R7/PG.00.03/2021.
文摘Utilization of Micro Hydro Power Plant at the Gunung Halu case study type run-off the river is a household use only in the afternoon,around 5 pm until bedtime at about 10 pm.Therefore,more than 75%of the energy is lost.This case study lost power which can be used as a by-product,such as for drying coffee beans.In this case study,a design was carried out to obtain by-products and improve power quality in the electrical system.In addition,they complain about the poor quality of power controlled by frequency using Triac-Based Electronic Dummy Load Control.The heat from the dummy load in the case study is used as a by-product.MHP with a minimum power of 20 kW,and the usage time of customer service is about 6 h.The energy for the by-products is about 360 kWh/day,and the power quality improved by using Triac-Based Electronic Load Control and Hysteresis Current Control for the active filter.As a result,the power factor is close to one,the generator current harmonics is less than 2%,and the voltage harmonics is less than 5%.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
基金Supported by National Natural Science Foundation of China (No.60806010,No.60976030)Tianjin Innovation Special Funds for Science and Technology (No.05FZZDGX00200)
文摘A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...
文摘A model for the definition of electrical Power is presented, which retrieves the concepts of homomorphism from the geometrical tensor approximation at the wavelet approach. Their definition here is nevertheless different in that it considers both tensor algebra and wavelet operators, solving thus most of the problems usually associated with the numerical methods.
文摘A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.
基金Project supported by the National Natural Science Foundation of China(Grant No.61203211)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140006)the Foundation for Outstanding Young Teachers of Nanjing University of Information Science&Technology,China(Grant No.20110423)
文摘In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
文摘应用半导体技术的固态功率放大器具有体积小和稳定性高等优点,在很多微波应用中取代了传统的真空器件行波管。在所有类型半导体材料中,第三代半导体材料GaN(Gallium Nitride)因为具有宽禁带、高电子迁移率和高击穿电压等优势,被广泛应用于功率放大器。基于功率放大器的发展,文中阐述了固态功率放大器的发展历史,总结了GaN技术与其他半导体技术性能的比较,并着重介绍了应用GaN HEMT(GaN High Electron Mobility Transistor)技术的功率放大器。讨论了GaN HEMT功率放大器的各种类型,包括A类、B类、C类、D类和E类等,介绍了应用于GaN功率放大器的效率和线性度提高技术,包括Doherty功率放大器和包络跟踪技术,以及数字预失真技术等,并就相关技术做了总结和对比。
基金supported in part by the National Natural Science Foundation of China (No.U1866601)。
文摘The AC electric arc furnace(EAF)is becoming a core apparatus of the modern steel industry.Nevertheless,it used to be a major threat of power quality in the traditional power supply system.In this paper,a flexible power supply system of the AC EAF is proposed,which is expected to completely alter its inherent cognition of impact load in the power grid.The basics of the power supply for EAF are first reviewed and the novel techniques to enhance the operation flexibility of EAF are introduced.The power circuit and the control structure are then presented,followed by the detailed strategies of various operations fully considering the features of EAF.A large disturbance stability criterion based on the mixed potential theory is also established for the practical application.Both electromagnetic transient simulations using PSCAD and benefit analyses verify the feasibility of the proposed system.
