Integrated power electronics module based on chip scale packaged power devices

High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

Simulation and Analysis of a Compact Electronic Infrastructure for DC Micro-Grid: Necessity and Challenges

Complex circuitry of electronic infrastructure of compact micro-grids with multiple renewable energy sources feeding the loads using parallel operation of inverters acts as a deterrent in developing such systems. This paper deals with applicable techniques reducing the driving circuits in parallel power inverters used in micro-grid system (MGS), mainly focused on the distributed generation (DG) in islanded mode. The method introduced in this paper, gives a minimal and compressed circuitry that can be implemented very cost-effectively with simple components. DC micro-grids are proposed and researched for the good connection with DC output type sources such as photovoltaic (PV), fuel cell, and secondary battery. In this paper, the electronic infrastructure of micro-grid is expressed. Then discussed the reasons for its complexity and the possibility of reducing the elements of electronic circuits are investigated. The reason for this is in order to compact DC micro-grid system for electrification to places like villages. Digital Simulation in Matlab Simulink is used to show the effectiveness of this novel driver topology for parallel operating inverters (NDTPI).

Wide bandgap semiconductor-based integrated circuits

Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.

晶体管级异质集成技术及其典型应用

晶体管级异质集成是后摩尔时代半导体微波器件技术发展的重点方向。介绍了针对平面和纵向两类不同结构器件分别开发的介质键合和金属键合两套外延层转移晶体管级异质集成工艺,研制出基于介质键合工艺的金刚石衬底GaN HEMT微波功率器件和基于金属键合工艺的SiC衬底GaAs PIN限幅器电路。测试结果表明,与常规的SiC衬底GaN HEMT器件相比,金刚石衬底GaN HEMT器件在高热耗工作下器件热阻减小超过50%,连续波工作输出功率和功率附加效率分别提高0.77 dB和5.6个百分点;与常规工艺的GaAs衬底限幅器相比,18~40 GHz SiC衬底GaAs PIN限幅器单片电路限幅电平基本一致,插入损耗改善约0.2 dB,耐功率能力提高3 dB以上。

面向下一代GaN功率技术的超薄势垒AlGaN/GaN异质结功率器件

AlGaN/GaN异质结型功率电子器件具有高工作温度、高击穿电压、高电子迁移率等优点,在推动下一代功率器件小型化、智能化等方面具有很大的材料和系统优势。从5种实现增强型GaN基功率电子器件的方法入手,重点介绍了采用超薄势垒AlGaN(小于6 nm)/GaN异质结实现无需刻蚀AlGaN势垒层的GaN基增强型器件的物理机理和实现方法。同时介绍了在超薄势垒AlGaN/GaN异质结构上实现增强型/耗尽型绝缘栅高电子迁移率晶体管单片集成的研究进展,进一步论证了在大尺寸Si基AlGaN/GaN超薄势垒平台上同片集成射频功率放大器、整流二极管、功率三极管等器件的可行性,为Si基GaN射频器件、功率器件、驱动和控制电路的单片集成奠定了技术基础。

绝缘体上硅功率半导体单芯片集成技术

利用单芯片集成技术制造的智能功率芯片具有体积小、寄生小、损耗低等方面的优势,其技术难度远高于传统的多芯片、单封装形式的智能功率模块.本文首先介绍了单片智能功率芯片的架构与技术需求;然后,探讨了绝缘体上硅功率半导体单芯片集成的工艺流程和器件类型;接着,总结了高压横向IGBT器件技术、续流二极管器件技术、LDMOS器件技术的特征和效果;此外,还讨论了单片智能功率芯片的相关可靠性问题,包括高压互连线效应和低温雪崩不稳定.本课题组在功率半导体集成型器件的电流能力、关断速度、短路承受能力、反向恢复峰值电流、安全工作区、高压互连线屏蔽、低温可靠性等关键特性优化或可靠性提升方面进行了自主创新,构建了基于绝缘体上硅的功率半导体单芯片集成技术,并成功研制了单片智能功率芯片.

氮化镓功率器件/模块封装技术研究进展

氮化镓(Ga N)作为典型的宽禁带半导体材料,具有高耐温、高耐击穿电压以及高电子迁移速率的优势,封装技术对于充分发挥Ga N的以上优势并保障工作可靠性十分关键。文中首先对比分析Si基、Si C基和Ga N基器件/模块封装的异同,随后从封装杂散电感、封装散热设计和封装连接可靠性3个方面,分别介绍其带来的问题以及解决方案,讨论目前研究可能存在的不足。基于综述分析,最后提出未来Ga N功率器件/模块封装技术亟待解决的问题以及研究展望。

大功率半导体模块封装进展与展望

大功率半导体模块的发展进化是电力电子系统升级和产业发展的最关键因素。文章根据功率模块的主要应用领域分类,综述了其产品和封装技术的最新进展,分析了新型模块产品的结构和技术特点;然后提出了当前模块封装面临的技术、成本以及新型应用系统要求等方面的挑战,讨论了向高频、高温、高可靠性、模块化等方向发展的挑战;最后对大功率半导体模块的互连及连接技术、集成化和灌封材料、紧凑封装结构的中长期趋势进行了探讨和展望。

X波段双模功率MMIC设计

基于有源负载调制的多阻抗匹配技术,采用0.25μm GaN HEMT工艺,研制了一款工作在X波段双模功率放大器芯片,使功率放大器在峰值及回退10 dB两种输出功率模式下均具有较高的效率。采用对称双路三级放大拓扑设计,利用多阻抗匹配与电压切换方式实现双模工作。主功放设计兼顾高功率与低功率模式下的输出功率与效率;辅功放兼顾低功率模式下输出匹配网络呈现高阻状态与高功率模式下匹配网络实现宽带匹配两种状态。测试结果表明,在25℃环境温度、脉宽100μs、占空比10%脉冲测试下,8.5~13.0 GHz频率范围内,功率放大器的高功率模式饱和输出功率最高可达47.5 dBm,功率附加效率最高达到43%;10~12 GHz频率范围内,低功率模式输出功率可达37 dBm,功率附加效率最高达到27%。

GaN基互补型逻辑电路的研究进展及挑战

氮化镓(GaN)基异质结场效应晶体管具有工作频率高、导通损耗低等优点,已经开始广泛应用在多种高频、高效功率转换器中。为了充分发挥GaN功率器件的潜能,需要将功率开关器件和控制器、驱动等外围电路进行全GaN单片集成以减少寄生参数。互补型逻辑电路是实现集成的关键元电路之一,但其研究起步较晚。介绍了n沟道和p沟道GaN增强型器件的制备方案及互补逻辑电路的研究进展。从电学性能匹配性及稳定性出发探讨了现有互补型逻辑电路面临的关键科学问题,可以为GaN基互补型逻辑电路的研究提供参考。

电力电子系统集成研究进展与现状

电力电子系统集成是当前电力电子技术领域人们普遍关注的前沿课题。本文就电力电子系统集成的若干关键技术:如电力电子系统集成芯片/模块标准化、集成系统芯片/标准集成模块关键技术、电力电子系统集成理论与方法等方面的研究进展与现状进行简述。

分立元件构成的电力电子集成功率模块的设计

该文提出一种采用分立元件构成的用于开关电源用电力电子集成功率模块的设计方案,包括软开关功率因数校正电路和移相全桥型软开关电路两种模块。集成模块中含有主电路开关元件和部分驱动元件。该模块采用多层布线的叠层结构,电路设计紧凑,减小了分布参数,使电路工作时的电压和电流应力明显减小,从而提高了电路的性能,并降低了电磁干扰。该结构方案实现了双面散热,从而降低了散热热阻,提高了可靠性。文中分别给出了两种集成模块的满功率实验结果,电路工作正常,达到了预期的性能。

电力电子集成技术的现状及发展方向

综述了电力电子集成技术目前的基本概念、研究的意义和现状等;列举了当前主要的研究机构和研究内容;分析了未来的发展方向。

电力电子化电力系统多尺度电压功角动态稳定问题

随着可再生能源发电、远距离输电及无功补偿和交流传动等应用的快速发展,电力电子变换装备以其在电能变换方面的灵活性在电力系统中的渗透水平不断提高,深刻地改变着电力系统的动态行为。近年来,国内外电力系统持续出现各种不明机理的动态问题,对电力系统安全稳定和运行构成重大威胁。该文从主要发电、输电和负荷装备的控制方式、动态特性及其对电力系统动态行为的影响角度出发,分析一次调频时间尺度以下电力电子化电力系统电压功角动态稳定问题的多尺度特征,并初步提出基于幅相运动方程、自稳性致稳性及广义稳定器等3个方面的系统建模、分析和控制的一般化概念和方法,即幅相动力学方法。

基于局部元等效电路原理对混合封装电力电子集成模块内互感耦合的研究

低压大电流混合封装电力电子集成模块(IPEM)内部功率电路与控制和驱动电路之间的互感耦合是电磁干扰的主要途径之一,为了准确预测电磁干扰的强度,需要对耦合互感进行精确计算,文中针对这个问题展开研究。首先,分析了功率电路的高频环流问题;其次,采用局部元等效电路(PEEC)原理对高频环流回路与典型控制和驱动回路之间的耦合互感进行了计算;最后,通过仿真和实验对计算结果进行了验证,表明该文对高频环流的干扰分析以及对耦合互感的计算方法是正确并且有效的。

倒装芯片集成电力电子模块

倒装芯片(Flip Chip,FC)技术广泛应用于微电子封装中,将该技术引入到三维的集成电力电子模块(Integrated Power Electronics Module,IPEM)的封装中,可以构成倒装芯片集成电力电子模块(FC-IPEM)。该文详细介绍FC-IPEM的结构和组装程序。在实验室完成由两只MOSFET和驱动、保护等电路构成的半桥FC-IPEM,并采用它构成同步整流Buck变换器,对半桥FC-IPEM进行电气性能测试,最后给出测试结果。

基于自关断器件的新型桥式短路限流器拓扑与控制策略

提出一种基于自关断开关器件的新型桥式短路故障限流器。该种单相(三相)限流器由1个整流桥、1个直流电感和1个(3个)旁路电感组成。直流电感用来限制故障初期的短路电流上升速度,其电感根据控制电路的响应速度和系统电压、电流额定值,以体积、成本最小为目标进行设计。旁路电感用来将短路电流限制到继电保护要求的数值上,其电感量根据系统电压和继电保护要求的短路电流设计。短路限流期间的电源电流仍为正弦量,因而不会对阻抗继电器、传统的电压电流互感器和总的继电保护方案产生不良影响。新型限流器的主电路得到了简化,控制电路和控制方法非常简单,动态性能得以提高。文中详细论述了用于三相系统的限流器的主电路拓扑结构、控制策略、参数设计与优化方法等。仿真和实验结果证明了所提新型限流器的有效性和实用性。

IGBT的死区补偿方法研究

对三相桥式逆变器死区效应进行了理论分析。阐述了死区效应对逆变器输出电压的影响。介绍了加入一种死区时间的方法,在此基础上提出了一种基于SVPWM控制的逆变器死区补偿方法,即对称补偿法。该方法有效地改善了死区效应引起的电流畸变,实验结果证明了理论分析的正确性和该方法的可行性和有效性,并成功用于变频器的设计中。