An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascod...An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio (PSRR) and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.展开更多
To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits,a high-order curvature-compensated bandgap voltage reference is presented employing...To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits,a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations.In addition,an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed.Based on the CSMC 0.5μm 20 V BCD process,the designed circuit is implemented;the active die area is 0.17×0.20 mm;. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from -40 to 150℃,the power supply rejection ratio is -98.2 dB,the line regulation is 0.3 mV/V,and the power consumption is only 0.38 mW.The proposed bandgap voltage reference has good characteristics such as small area,low power consumption, good temperature stability,high power supply rejection ratio,as well as low line regulation.This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog,digital and mixed systems.展开更多
Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxidesemiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corp...Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxidesemiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 gm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage's temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× 10^-6/℃ when temperature is changed from -40 ℃ to 125 ℃ with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of - 104.54 dB, - 104.54 dB,- 104.5 dB, - 101.82 dB and - 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.展开更多
A high-order curvature-compensated CMOS bandgap reference(BGR) topology with a low temperature coefficient(TC) over a wide temperature range and a high power supply reject ratio(PSRR) is presented.High-order cor...A high-order curvature-compensated CMOS bandgap reference(BGR) topology with a low temperature coefficient(TC) over a wide temperature range and a high power supply reject ratio(PSRR) is presented.High-order correction is realized by incorporating a nonlinear current INL, which is generated by ?V_(GS) across resistor into current generated by a conventional first-order current-mode BGR circuit. In order to achieve a high PSRR over a broad frequency range, a voltage pre-regulating technique is applied. The circuit was implemented in CSMC 0.5 μm 600 V BCD process. The experimental results indicate that the proposed topology achieves TC of0.19 ppm/°C over the temperature range of 165 °C(-40 to 125 °C), PSRR of-123 d B @ DC and-56 d B @ 100 k Hz. In addition, it achieves a line regulation performance of 0.017%/V in the supply range of 2.8–20 V.展开更多
This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a co...This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61161003,61264001,61166004)the Guangxi Natural Science Foundation(No.2013GXNSFAA019333)
文摘An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio (PSRR) and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.
基金supported by the National Natural Science Foundation of China(Nos.60725415,60971066)the National High-Tech Research and Development Program of China(Nos.2009AA01Z258,2009AA01Z260)the National Science & Technology Important Project of China(No.2009ZX01034-002-001-005)
文摘To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits,a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations.In addition,an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed.Based on the CSMC 0.5μm 20 V BCD process,the designed circuit is implemented;the active die area is 0.17×0.20 mm;. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from -40 to 150℃,the power supply rejection ratio is -98.2 dB,the line regulation is 0.3 mV/V,and the power consumption is only 0.38 mW.The proposed bandgap voltage reference has good characteristics such as small area,low power consumption, good temperature stability,high power supply rejection ratio,as well as low line regulation.This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog,digital and mixed systems.
基金supported by the Natural Science Foundation Project of CQ CSTC(cstc2016jcyj A0347)the Science and Technology on Analog Integrated Circuit Laboratory(6142802011503)the Key Technology Innovation Project of Key Industries in Chongqing(cstc2016zdcy-ztzx0038,cstc2017zdcy-zdyf0166)
文摘Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxidesemiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 gm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage's temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× 10^-6/℃ when temperature is changed from -40 ℃ to 125 ℃ with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of - 104.54 dB, - 104.54 dB,- 104.5 dB, - 101.82 dB and - 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.
基金supported by the National Natural Science Foundation of China(Nos.BK20150627,61674030)the Natural Science Foundation of Jiangsu Province(No.61504025)the National Key research and Development Plan(No.2017YFB0402900)
文摘A high-order curvature-compensated CMOS bandgap reference(BGR) topology with a low temperature coefficient(TC) over a wide temperature range and a high power supply reject ratio(PSRR) is presented.High-order correction is realized by incorporating a nonlinear current INL, which is generated by ?V_(GS) across resistor into current generated by a conventional first-order current-mode BGR circuit. In order to achieve a high PSRR over a broad frequency range, a voltage pre-regulating technique is applied. The circuit was implemented in CSMC 0.5 μm 600 V BCD process. The experimental results indicate that the proposed topology achieves TC of0.19 ppm/°C over the temperature range of 165 °C(-40 to 125 °C), PSRR of-123 d B @ DC and-56 d B @ 100 k Hz. In addition, it achieves a line regulation performance of 0.017%/V in the supply range of 2.8–20 V.
基金supported by the National Natural Science Foundation of China (61471075, 61301124)the 2013 Program for Innovation Team Building at Institutions of Higher Education in Chongqing (the Innovation Team of Smart Medical System and Key Technology)
文摘This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively.