设计了一种线性补偿低温漂高电源抑制比带隙基准电压源电路。带隙基准核心电路采用三支路共源共栅电流镜结构,提高电路电源抑制比。补偿电路采用分段补偿原理,在低温阶段,加入一段负温度系数电流,在高温阶段,加入一段正温度系数电流,通...设计了一种线性补偿低温漂高电源抑制比带隙基准电压源电路。带隙基准核心电路采用三支路共源共栅电流镜结构,提高电路电源抑制比。补偿电路采用分段补偿原理,在低温阶段,加入一段负温度系数电流,在高温阶段,加入一段正温度系数电流,通过补偿,使带隙基准输出电压的精确度大大提高,达到降低温度系数的目的;同时电流镜采用共源共栅结构,不仅提高电路的电源抑制比,而且可以抑制负载对镜像晶体管电压的影响。基于0.5μm CMOS工艺,使用Cadence Spectre对电路仿真,结果表明,在-50^+125℃温度范围内,基准输出电压的温度系数为2.62×10^(-6)/℃,低频时的电源抑制比(PSRR)高达88 d B。展开更多
A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CM...A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.展开更多
文摘设计了一种线性补偿低温漂高电源抑制比带隙基准电压源电路。带隙基准核心电路采用三支路共源共栅电流镜结构,提高电路电源抑制比。补偿电路采用分段补偿原理,在低温阶段,加入一段负温度系数电流,在高温阶段,加入一段正温度系数电流,通过补偿,使带隙基准输出电压的精确度大大提高,达到降低温度系数的目的;同时电流镜采用共源共栅结构,不仅提高电路的电源抑制比,而且可以抑制负载对镜像晶体管电压的影响。基于0.5μm CMOS工艺,使用Cadence Spectre对电路仿真,结果表明,在-50^+125℃温度范围内,基准输出电压的温度系数为2.62×10^(-6)/℃,低频时的电源抑制比(PSRR)高达88 d B。
基金Sponsored by the National Natural Science Foundation of China(Grant No.61471075)the 2013 Program for Innovation Team Building at Institutions of Higher Education in Chongqing(The Innovation Team of Smart Medical System and Key Technology)
文摘A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.
