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Novel high-PSRR high-order curvature-compensated bandgap voltage reference 被引量:1
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作者 Zhou Qianneng Yan Kai +3 位作者 Lin Jinzhao Pang Yu Li Guoquan Luo Wei 《The Journal of China Universities of Posts and Telecommunications》 EI CSCD 2016年第2期66-72,96,共8页
This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a co... This paper proposes a novel high-power supply rejection ratio(high-PSRR) high-order curvature-compensated CMOS bandgap voltage reference(BGR) in SMIC 0.18 μm CMOS process. Three kinds of current are added to a conventional BGR in order to improve the temperature drift within wider temperature range, which include a piecewise-curvaturecorrected current in high temperature range, a piecewise-curvature-corrected current in low temperature range and a proportional-to-absolute-temperature T^(1.5) current. The high-PSRR characteristic of the proposed BGR is achieved by adopting the technique of pre-regulator. Simulation results shows that the temperature coefficient of the proposed BGR with pre-regulator is 8.42x10^(-6)′ /℃ from - 55 ℃ to 125 ℃ with a 1.8 V power supply voltage. The proposed BGR with pre-regulator achieves PSRR of - 123.51 dB, - 123.52 dB, - 88.5 dB and - 50.23 dB at 1 Hz, 100 Hz, 100 kHz and 1 MHz respectively. 展开更多
关键词 bandgap voltage reference pre-regulator temperature coefficient power supply rejection ratio
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