CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of ...CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of CuInS2 thin films were investigated.X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films.Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used.When the deposition sequence of precursor is In/Cu/In,the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation.The surface morphology of CIS films is uniform and compacted.The absorption coefficient is larger than 104 cm-1 with optical band gap Eg close to 1.4 eV.展开更多
Epitaxial YBCO films were deposited on （100） LaAlO3 single-crystal substrates by metalorganic deposition of metal trifluoroacetate precursors with different concentrations. All the YBCO films have Tc around 91 K and...Epitaxial YBCO films were deposited on （100） LaAlO3 single-crystal substrates by metalorganic deposition of metal trifluoroacetate precursors with different concentrations. All the YBCO films have Tc around 91 K and Jc excess 2 MA/cm^2 at 77 K in zero field. XRD θ-2θscans show all the films have c-axis normal orientation. The FWHM （full width at half-maximum intensity） values of X-ray ω-scans of （005） reflection are 0.379°, 0.283°, and 0.543° for the YBCO thin films deposited with precursor solution concentrations of 1.52, 1.0, and 0.75 mol/L, respectively. With the concentration of the precursors decreasing, the thickness of the films decreases linearly. SEM micrographs show that porosities in the films become bigger with the precursor solution concentration decreasing. The big porosities in the film with the lowest concentration precursor deteriorate the superconducting property and make it have a wider superconducting transition and a lower Jc.展开更多
Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0...Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.展开更多
A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organi...A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.展开更多
A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at dep...A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10P–5P ΩP–1P?cmP–1P. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 μm while XRD indicates parallel orientation of the basal plane to the substrate surface.展开更多
Mass transport of Y(dpm)2 Ba(dpm)5· OH· 2Ho and Cu (dpm)2 by a carrier gas(argon) was theoretically considered and experimentally studied as a function of the system with operating parameters including tempe...Mass transport of Y(dpm)2 Ba(dpm)5· OH· 2Ho and Cu (dpm)2 by a carrier gas(argon) was theoretically considered and experimentally studied as a function of the system with operating parameters including temperature, carrier gas flow rate and system pressure. The experimental results are in a good agreement with the theoretical prediction. The mechanism of mass transport of these organometallic precursors and their use for YBCO film stoichiometry control and reproducibility are discussed.展开更多
The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios ...The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios of the zinc acetate-ammonium acetate additives, and each combination was used to deposit a thin film using metalorganic chemical vapour deposition (MOCVD) method. The produced thin films were characterised using Rutherford backscattering (RBS) spectroscopy, uv-visible spectrometry, x-ray diffractometry, four point probe measurements and optical microscopy. The deposited thin films showed a fairly consistent zinc:oxygen:nitrogen ratio of 4.4:3.7:1, the film structures were quasicrystalline and the sheet resistivities were high, while other familiar characteristics like optical transmittance, bandgap, thermal stability, etc. were maintained in the grown films. Applications in device fabrication and active sensor devices were hence envisaged as the emergent potentials of the thin films.展开更多
Zn/Sn/Cu （CZT） stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different tem- peratures （200℃, 300 ℃, 350 ℃, and 400 ℃） for 0.5 h and then followed by sulfurization at 500℃ for ...Zn/Sn/Cu （CZT） stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different tem- peratures （200℃, 300 ℃, 350 ℃, and 400 ℃） for 0.5 h and then followed by sulfurization at 500℃ for 2 h. Then, the structures, morphologies, and optical properties of the as-obtained Cu2ZnSnS4 （CZTS） films were studied by x-ray diffraction （XRD）, Raman spectroscopy, UV-Vis-NIR, scanning electron microscope （SEM）, and energy-dispersive x-ray spectroscopy （EDX）. The XRD and Raman spectroscopy results indicated that the sample pretreated at 350℃ had no secondary phase and good crystallization. At the same time, SEM confirmed that it had large and dense grains. According to the UV-Vis-NIR spectrum, the sample had an absorption coefficient larger than 10^4 cm-1 in the visible light range and a band gap close to 1.5 eV.展开更多
Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics,...Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.展开更多
The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis ...The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.展开更多
PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy chan...PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy change of the Pb2+/Zr4+/Ti4+ stoichiometric. In the paper we also investigate PT seeds influence on ferroelectric properties, crystallographic structures and surface morphologies, and find the bottom/up PT seeds structure prompte PZT crystallization and have superior ferroeletric properties. The paper introduce a method to deduce and calculate lattice constant α by ‘least square method’, then the more accurate lattice constant a0 can be got from X-ray diffractometer (XRD) analysis data. We also discover that grain sizes of PZT film calculated from XRD data are much closed to those of AFM, and the film a0 is relatively small due to crushing stress.展开更多
This paper describes the effect of the composition of the oxide films on the properties of electrodes Ti/M<sub>x</sub>Ti<sub>y</sub>Sn<sub>z</sub>O<sub>2</sub> (M = Ir o...This paper describes the effect of the composition of the oxide films on the properties of electrodes Ti/M<sub>x</sub>Ti<sub>y</sub>Sn<sub>z</sub>O<sub>2</sub> (M = Ir or Ru) prepared by the polymeric precursor method. XRD studies showed that the anodes are formed by solid solutions. The electrodes containing IrO<sub>2</sub> exhibit lower activity for the oxygen evolution reaction. The doping of the electrode surface with SnO<sub>2</sub> improves the catalytic properties of the anodes. However, it should be held in appropriate compositions, because the change in the atomic ratio of this element shows a marked effect on the stability of the oxides. Electrode Ti/Ir<sub>0.2</sub>Ti<sub>0.3</sub>Sn<sub>0.5</sub>O<sub>2</sub> has lower lifetime, i.e. 6 hours. The 20% decrease in the stoichiometric amount of SnO<sub>2</sub> increases the time to a value above 70 hours, as observed for Ti/Ir<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub>. Electrode Ti/Ru<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub> shows lifetime of 11 hours;therefore IrO<sub>2</sub> is more stable than RuO<sub>2</sub> under the conditions investigated. These results suggest that electrode Ti/Ir<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub> is promising for different applications, such as water electrolysis, capacitors and organic electrosynthesis.展开更多
基金Project(2006AA03Z2370) supported by the High-Tech Research and Development Program of China
文摘CuInS2 thin films were prepared by sulfurization of Cu-In precursors.The influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of CuInS2 thin films were investigated.X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films.Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used.When the deposition sequence of precursor is In/Cu/In,the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation.The surface morphology of CIS films is uniform and compacted.The absorption coefficient is larger than 104 cm-1 with optical band gap Eg close to 1.4 eV.
文摘Epitaxial YBCO films were deposited on （100） LaAlO3 single-crystal substrates by metalorganic deposition of metal trifluoroacetate precursors with different concentrations. All the YBCO films have Tc around 91 K and Jc excess 2 MA/cm^2 at 77 K in zero field. XRD θ-2θscans show all the films have c-axis normal orientation. The FWHM （full width at half-maximum intensity） values of X-ray ω-scans of （005） reflection are 0.379°, 0.283°, and 0.543° for the YBCO thin films deposited with precursor solution concentrations of 1.52, 1.0, and 0.75 mol/L, respectively. With the concentration of the precursors decreasing, the thickness of the films decreases linearly. SEM micrographs show that porosities in the films become bigger with the precursor solution concentration decreasing. The big porosities in the film with the lowest concentration precursor deteriorate the superconducting property and make it have a wider superconducting transition and a lower Jc.
基金Project(2004AA513023) supported by the National High Technology Research and Development Program of China
文摘Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.
文摘A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.
文摘A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10P–5P ΩP–1P?cmP–1P. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 μm while XRD indicates parallel orientation of the basal plane to the substrate surface.
文摘Mass transport of Y(dpm)2 Ba(dpm)5· OH· 2Ho and Cu (dpm)2 by a carrier gas(argon) was theoretically considered and experimentally studied as a function of the system with operating parameters including temperature, carrier gas flow rate and system pressure. The experimental results are in a good agreement with the theoretical prediction. The mechanism of mass transport of these organometallic precursors and their use for YBCO film stoichiometry control and reproducibility are discussed.
文摘The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios of the zinc acetate-ammonium acetate additives, and each combination was used to deposit a thin film using metalorganic chemical vapour deposition (MOCVD) method. The produced thin films were characterised using Rutherford backscattering (RBS) spectroscopy, uv-visible spectrometry, x-ray diffractometry, four point probe measurements and optical microscopy. The deposited thin films showed a fairly consistent zinc:oxygen:nitrogen ratio of 4.4:3.7:1, the film structures were quasicrystalline and the sheet resistivities were high, while other familiar characteristics like optical transmittance, bandgap, thermal stability, etc. were maintained in the grown films. Applications in device fabrication and active sensor devices were hence envisaged as the emergent potentials of the thin films.
基金supported by Funding for Outstanding Doctoral Dissertation in NUAA,China(Grant No.BCXJ13-12)the Jiangsu Innovation Program for Graduate Education,China(Grant No.CXLX13 150)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.61176062)the Science and Technology Supporting Project of Jiangsu Province,China(Grant No.BE2012103)the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘Zn/Sn/Cu （CZT） stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different tem- peratures （200℃, 300 ℃, 350 ℃, and 400 ℃） for 0.5 h and then followed by sulfurization at 500℃ for 2 h. Then, the structures, morphologies, and optical properties of the as-obtained Cu2ZnSnS4 （CZTS） films were studied by x-ray diffraction （XRD）, Raman spectroscopy, UV-Vis-NIR, scanning electron microscope （SEM）, and energy-dispersive x-ray spectroscopy （EDX）. The XRD and Raman spectroscopy results indicated that the sample pretreated at 350℃ had no secondary phase and good crystallization. At the same time, SEM confirmed that it had large and dense grains. According to the UV-Vis-NIR spectrum, the sample had an absorption coefficient larger than 10^4 cm-1 in the visible light range and a band gap close to 1.5 eV.
基金supported by the Technology Innovation Program Industrial Strategic Technology Development Program(10035430)Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE,Korea.The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2
文摘Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.
基金the Third World Academy of Science (TWAS, Grant #93-058 R6/PHYS/AF/AC)Obafemi Awolowo University(University Research Committee URC) for supporting this project
文摘The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.
基金Supported by the Ferroelectric Films Part of 973 Projects (No.51310Z02)
文摘PZT(Zr/Ti=52/48) ferroelectric films are prepared by a new modified Sol-Gel method from three stable-separated Pb2+, Zr4+, Ti4+ precursor–monomers. This method needs no distillation and has the advantage of easy change of the Pb2+/Zr4+/Ti4+ stoichiometric. In the paper we also investigate PT seeds influence on ferroelectric properties, crystallographic structures and surface morphologies, and find the bottom/up PT seeds structure prompte PZT crystallization and have superior ferroeletric properties. The paper introduce a method to deduce and calculate lattice constant α by ‘least square method’, then the more accurate lattice constant a0 can be got from X-ray diffractometer (XRD) analysis data. We also discover that grain sizes of PZT film calculated from XRD data are much closed to those of AFM, and the film a0 is relatively small due to crushing stress.
文摘This paper describes the effect of the composition of the oxide films on the properties of electrodes Ti/M<sub>x</sub>Ti<sub>y</sub>Sn<sub>z</sub>O<sub>2</sub> (M = Ir or Ru) prepared by the polymeric precursor method. XRD studies showed that the anodes are formed by solid solutions. The electrodes containing IrO<sub>2</sub> exhibit lower activity for the oxygen evolution reaction. The doping of the electrode surface with SnO<sub>2</sub> improves the catalytic properties of the anodes. However, it should be held in appropriate compositions, because the change in the atomic ratio of this element shows a marked effect on the stability of the oxides. Electrode Ti/Ir<sub>0.2</sub>Ti<sub>0.3</sub>Sn<sub>0.5</sub>O<sub>2</sub> has lower lifetime, i.e. 6 hours. The 20% decrease in the stoichiometric amount of SnO<sub>2</sub> increases the time to a value above 70 hours, as observed for Ti/Ir<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub>. Electrode Ti/Ru<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub> shows lifetime of 11 hours;therefore IrO<sub>2</sub> is more stable than RuO<sub>2</sub> under the conditions investigated. These results suggest that electrode Ti/Ir<sub>0.3</sub>Ti<sub>0.4</sub>Sn<sub>0.3</sub>O<sub>2</sub> is promising for different applications, such as water electrolysis, capacitors and organic electrosynthesis.
