The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate p...The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.展开更多
基金The research was supported by the Major Research Plan of Wuhan City(961001005-1)the Open Fund of State Key Laboratory for SimulationDie Technology in Huazhong Univ.of Sci.&Tech.(99-7)
文摘The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.
