The fuzzy static and dynamic random phenomena in an abstract separable Banach space is discussed in this paper. The representation theorems for fuzzy set valued random sets, fuzzy random elements and fuzzy set value...The fuzzy static and dynamic random phenomena in an abstract separable Banach space is discussed in this paper. The representation theorems for fuzzy set valued random sets, fuzzy random elements and fuzzy set valued stochastic processes are obtained.展开更多
The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed...The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC.展开更多
文摘The fuzzy static and dynamic random phenomena in an abstract separable Banach space is discussed in this paper. The representation theorems for fuzzy set valued random sets, fuzzy random elements and fuzzy set valued stochastic processes are obtained.
基金support of the"Strategic Priority Research Program"of the Chinese Academy of Sciences(No.XDA09020402)the National Integrate Circuit Research Program of China(No.2009ZX02023-003)+2 种基金the National Natural Science Foundation of China(Nos.61261160500,61376006,61401444,61504157)the Science and Technology Council of Shanghai(Nos.14DZ2294900,15DZ2270900,14ZR1447500)the National Natural Science Foundation of China(61874178)
文摘The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC.
