Speaking and writing are the two complex skills in the process of the second language learning and communication.This essay will do a further analysis of each skill,their function and how to enhance the speaking and w...Speaking and writing are the two complex skills in the process of the second language learning and communication.This essay will do a further analysis of each skill,their function and how to enhance the speaking and writing skills in a productive way.展开更多
This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect i...This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.展开更多
文摘Speaking and writing are the two complex skills in the process of the second language learning and communication.This essay will do a further analysis of each skill,their function and how to enhance the speaking and writing skills in a productive way.
基金Project supported by in part by the National Natural Science Foundation of China(Nos.61534005,61675195)the Beijing Science and Technology Commission(No.Z151100003315019)the Natural Science Foundation of Beijing Municipality(No.4162063)
文摘This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.
