We focused on developing penetration-type semitransparent thin-film solar cells(STSCs) using hydrogenated amorphous Si(a-Si:H) for a building-integrated photovoltaic(BIPV) window system. Instead of conventional p-type...We focused on developing penetration-type semitransparent thin-film solar cells(STSCs) using hydrogenated amorphous Si(a-Si:H) for a building-integrated photovoltaic(BIPV) window system. Instead of conventional p-type a-Si:H, p-type hydrogenated microcrystalline Si oxide(p-μc-SiOx:H) was introduced for a wide-bandgap and conductive window layer. For these purposes, we tuned the CO2/SiH4 flow ratio(R) during p-μc-SiOx:H deposition. The film crystallinity decreased from 50% to 13% as R increased from 0.2 to 1.2. At the optimized R of 0.6, the quantum efficiency was improved under short wavelengths by the suppression of p-type layer parasitic absorption. The series resistance was well controlled to avoid fill factor loss at R = 0.6. Furthermore, we introduced dual buffers comprising p-a-SiOx:H/i-a-Si:H at the p/i interface to alleviate interfacial energy-band mismatch. The a-Si:H STSCs with the suggested window and dual buffers showed improvements in transmittance and efficiency from 22.9% to 29.3% and from 4.62% to 6.41%, respectively, compared to the STSC using a pristine p-a-Si:H window.展开更多
基金supported by the Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) under grant Nos. 20163010012560 and 20172010104940
文摘We focused on developing penetration-type semitransparent thin-film solar cells(STSCs) using hydrogenated amorphous Si(a-Si:H) for a building-integrated photovoltaic(BIPV) window system. Instead of conventional p-type a-Si:H, p-type hydrogenated microcrystalline Si oxide(p-μc-SiOx:H) was introduced for a wide-bandgap and conductive window layer. For these purposes, we tuned the CO2/SiH4 flow ratio(R) during p-μc-SiOx:H deposition. The film crystallinity decreased from 50% to 13% as R increased from 0.2 to 1.2. At the optimized R of 0.6, the quantum efficiency was improved under short wavelengths by the suppression of p-type layer parasitic absorption. The series resistance was well controlled to avoid fill factor loss at R = 0.6. Furthermore, we introduced dual buffers comprising p-a-SiOx:H/i-a-Si:H at the p/i interface to alleviate interfacial energy-band mismatch. The a-Si:H STSCs with the suggested window and dual buffers showed improvements in transmittance and efficiency from 22.9% to 29.3% and from 4.62% to 6.41%, respectively, compared to the STSC using a pristine p-a-Si:H window.
