The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double del...The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device.展开更多
基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,...基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
文摘The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device.
文摘基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
