Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

Optimization of Pulse Laser Annealing to Increase Sharpness of Implanted-junction Rectifier in Semiconductor Heterostructure

It has been recently shown that inhomogeneity of a semiconductor heterostructure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers,which are formed in the semiconductor heterostructure.It has been also shown that together with increasing of the sharpness,homogeneity of impurity distribution in doped area increases.The both effect could be increased by formation of an inhomogeneous distribution of temperature(for example,by laser annealing).Some conditions on correlation between inhomogeneities of the semiconductor heterostructure and temperature distribution have been considered.Annealing time has been optimized for pulse laser annealing.

Comparison on Morphological and Optical Properties of TiO_(2) Thin Films Grown by Single-Pulse and Multi-Pulse Laser Ablation

TiO2 thin films were prepared on glass substrates using the PLD (Pulsed Laser Deposition) technique. In order to carry out the ablation process, a Nd:YAG laser was used emitting in 1064 nm wavelength at 10 Hz repetition rate, set up for operating in both single-pulse and multi-pulse regimes. A comparison of the deposition rate, the optical and morphological properties of the layers obtained from both ablation regimes was made, which showed that the multi-pulsed ablation produced layers with a higher surface quality and better optical properties.

Electrokinetic-mechanism of water and furfural oxidation on pulsed laser-interlaced Cu_(2)O and CoO on nickel foam

The electrocatalytic oxidation of biomass-derived furfural(FF)feedstocks into 2-furoic acid(FA)holds immense industrial potential in optics,cosmetics,polymers,and food.Herein,we fabricated Co O/Ni O/nickel foam(NF)and Cu_(2)O/Ni O/NF electrodes via in situ pulsed laser irradiation in liquids(PLIL)for the bifunctional electrocatalysis of oxygen evolution reaction(OER)and furfural oxidation reaction(FOR),respectively.Simultaneous oxidation of NF surface to NiO and deposition of CoO and/or Cu_(2)O on NF during PLIL offer distinct advantages for enhancing both the OER and FOR.CoO/NiO/NF electrocatalyst provides a consistently low overpotential of~359 m V(OER)at 10 m A/cm^(2),achieving the maximum FA yield(~16.37 m M)with 61.5%selectivity,79.5%carbon balance,and a remarkable Faradaic efficiency of~90.1%during 2 h of FOR at 1.43 V(vs.reversible hydrogen electrode).Mechanistic pathway via in situ electrochemical-Raman spectroscopy on CoO/NiO/NF reveals the involvement of phase transition intermediates(NiOOH and CoOOH)as surface-active centers during electrochemical oxidation.The carbonyl carbon in FF is attacked by hydroxyl groups to form unstable hydrates that subsequently undergo further oxidation to yield FA products.This method holds promise for large-scale applications,enabling simultaneous production of renewable building materials and fuel.

Collision off-axis position dependence of relativistic nonlinear Thomson inverse scattering of an excited electron in a tightly focused circular polarized laser pulse

This paper presents a novel view of the impact of electron collision off-axis positions on the dynamic properties and relativistic nonlinear Thomson inverse scattering of excited electrons within tightly focused, circularly polarized laser pulses of varying intensities. We examine the effects of the transverse ponderomotive force, specifically how the deviation angle and speed of electron motion are affected by the initial off-axis position of the electron and the peak amplitude of the laser pulse. When the laser pulse intensity is low, an increase in the electron's initial off-axis distance results in reduced spatial radiation power, improved collimation, super-continuum phenomena generation, red-shifting of the spectrum's harmonic peak, and significant symmetry in the radiation radial direction. However, in contradiction to conventional understandings,when the laser pulse intensity is relatively high, the properties of the relativistic nonlinear Thomson inverse scattering of the electron deviate from the central axis, changing direction in opposition to the aforementioned effects. After reaching a peak, these properties then shift again, aligning with the previous direction. The complex interplay of these effects suggests a greater nuance and intricacy in the relationship between laser pulse intensity, electron position, and scattering properties than previously thought.

All-solid-state far-UVC pulse laser at 222 nm wavelength for UVC disinfection

A 222 nm all-solid-state far-ultraviolet C(UVC)pulse laser system based on an optical parametric oscillator(OPO)and second-harmonic generation(SHG)usingβ-Ba2BO4(BBO)crystals was demonstrated.Pumped by a Nd∶Y3Al5O12 laser with a repetition rate of 100 Hz at 355 nm,the maximum signal laser pulse energy of 1.22 mJ at 444 nm wavelength was obtained from the BBO-OPO system,corresponding to a conversion efficiency of 27.9%.The maximum output pulse energy of 164.9μJ at the 222 nm wavelength was successfully achieved,corresponding to an SHG conversion efficiency of 16.2%.Moreover,the tunable output wavelength of UVC light from 210 nm to 252.5 nm was achieved.

Laser shaping and optical power limiting of pulsed Laguerre–Gaussian laser beams of high-order radial modes in fullerene C60

We study the strong nonlinear optical dynamics of nanosecond pulsed Laguerre–Gaussian laser beams of high-order radial modes with zero orbital angular momentum propagating in the fullerene C60molecular medium. It is found that the spatiotemporal profile of the incident pulsed Laguerre–Gaussian laser beam is strongly reshaped during its propagation in the C60molecular medium. The centrosymmetric temporal profile of the incident pulse gradually evolves into a noncentrosymmetric meniscus shape, and the on-axis pulse duration is clearly depressed. Furthermore, the field intensity is distinctly attenuated due to the field-intensity-dependent reverse saturable absorption, and clear optical power limiting behavior is observed for different orders of the input pulsed Laguerre–Gaussian laser beams before the takeover of the saturation effect;the lower the order of the Laguerre–Gaussian beam, the lower the energy transmittance.

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Optimization of large-area YBa_(2)Cu_(3)O_(7-δ)thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.

Pulsed Laser Annealed Ga Hyperdoped Poly-Si/SiO_(x)Passivating Contacts for High-Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit.We demonstrate that conventionally doped,hole-selective poly-Si/SiO_(x)contacts that provide poor surface passivation of c-Si can be replaced with Ga-or B-doped contacts based on non-equilibrium doping.We overcome the solid solubility limit for both dopants in poly-Si by rapid cooling and recrystallization over a timescale of∼25 ns.We show an active Ga dopant concentration of∼3×10^(20)cm^(−3)in poly-Si which is six times higher than its solubility limit in c-Si,and a B dopant concentration as high as∼10^(21) cm^(−3).We measure an implied open-circuit voltage of 735 mV for Ga-doped poly-Si/SiO_(x)contacts on Czochralski Si with a low contact resistivity of 35.5±2.4 mΩcm^(2).Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p-n junction that contributes to the low contact resistivity.Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high-efficiency devices.

High harmonic generation in crystal SiO_(2) by sub-10-fs laser pulses

The high harmonic generation(HHG)by few-cycle laser pulses is essential for research in strong-field solid-state physics.Through comparison of high harmonic spectra of solids generated by laser pulses with varying durations,we discovered that lasers with good dispersion compensation are capable of producing a broad spectrum of high harmonics.As the pulse duration is further compressed,several interference peaks appear in the broad spectrum.Moreover,we conducted simulations using the semiconductor Bloch equation,considering the effect of Berry curvature,to better understand this process.Our work provides a valuable approach for studying HHG by few-cycle laser pulses in solid materials,expanding the application of HHG in attosecond physics.

Structural Analysis of TiC and TiC-C Core-Shell Nanostructures Produced by Pulsed-Laser Ablation

This paper reports on the ablation process of a pure Ti solid target immersed in a C-enriched acetone solution, leading to the production of titanium carbide (TiC) and Ti-C core-shell nanostructures. The used route of synthesis is generally called pulsed laser ablation in liquid (PLAL). The presence of carbon structures in the solution contributed to the carbon content in the produced Ti-based nanomaterials. The atomic composition of the produced nanostructures was analyzed using SEM-EDS, while TEM micrographs revealed the formation of spherical TiC and core-shell nanostructures ranging from 40 to 100 nm. The identification of atomic planes by HRTEM confirmed a 10 nm diameter C-shell with a graphite structure surrounding the Ti-core. Raman spectroscopy allowed for the identification of D and G peaks for graphite and a Raman signal at 380 and 600 cm−1, assigned to TiC. The results contribute to the state-of-the-art production of TiC and Ti-C core-shell nanostructures using the PLAL route.

Real-time porosity reduction during metal directed energy deposition using a pulse laser

Porosity is a challenging issue in additive manufacturing and is detrimental to the quality of the additively manufactured products.In this study,a real-time porosity reduction technique was developed by incorporating a pulse laser into a laser metal powder directed energy deposition(DED)system.The incorporated pulse laser can accelerate fluid flow within the melt pool and facilitate the escape of pores before complete solidification.It achieves this real-time porosity reduction by inducing accelerated and turbulent Marangoni flow,ultrasonic waves,and shock waves into the melt pool.The uniqueness and advantages of the proposed technique include the following:(1)For a laser metal powder DED process,this study proposed a noncontact,nondestructive,and real-time porosity reduction technique at the melt pool level.(2)It was experimentally and numerically validated that the developed technique did not alter the geometry and the grain structure of the manufactured Ti-6Al-4V samples.(3)Because the porosity reduction is accomplished at the melt pool level,its application is not limited by the size,shape,or complexity of the printing target.(4)The developed technique can be readily incorporated into the existing DED systems without any modification of the original tool-path design.The experimental results showed that the pore volume fraction decreased from 0.132%to 0.005%,no pores larger than 6×10^(4)μm^(3) were observed,and a 91%reduction in the total pore number was achieved when the pulse laser energy reached 11.5 mJ.

The implementation and data analysis of an interferometer for intense short pulse laser experiments

We present an interferometry setup and the detailed fringe analysis method for intense short pulse(SP) laser experiments.The interferometry scheme was refined through multiple campaigns to investigate the effects of pre-plasmas on energetic electrons at the Jupiter Laser Facility at Lawrence Livermore National Laboratory. The interferometer used a frequency doubled(λ=0.527 μm) 0.5 ps long optical probe beam to measure the pre-plasma density, an invaluable parameter to better understand how varying pre-plasma conditions affect the characteristics of the energetic electrons. The hardware of the diagnostic, data analysis and example data are presented. The diagnostic setup and the analysis procedure can be employed for any other SP laser experiments and interferograms, respectively.

A new method on diagnostics of muons produced by a short pulse laser

Muons produced by a short pulse laser can serve as a new type of muon source having potential advantages of high intensity, small source emittance, short pulse duration and low cost. To validate it in experiments, a suitable muon diagnostics system is needed since high muon flux generated by a short pulse laser shot is always accompanied by high radiation background, which is quite different from cases in general muon researches. A detection system is proposed to distinguish muon signals from radiation background by measuring the muon lifetime. It is based on the scintillator detector with water and lead shields, in which water is used to adjust energies of muons stopped in the scintillator and lead to against radiation background. A Geant 4 simulation on the performance of the detection system shows that efficiency up to 52% could be arrived for low-energy muons around 200 MeV and this efficiency decreases to 14% for high-energy muons above 1000 MeV. The simulation also shows that the muon lifetime can be derived properly by measuring attenuation of the scintilla light of electrons from muon decays inside the scintillator detector.

Structural and Surface Morphology Analysis of Copper Phthalocyanine Thin Film Prepared by Pulsed Laser Deposition and Thermal Evaporation Techniques

In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.

A New Synthetical Model of High-Power Pulsed Laser Ablation

We develop a new synthetical model of high-power pulsed laser ablation,which considers the dynamicabsorptance,vaporization,and plasma shielding.And the corresponding heat conduction equations with the initial andboundary conditions are given.The numerical solutions are obtained under the reasonable technical parameter condi-tions by taking YBa_2Cu_3O_7 target for example.The space-dependence and time-dependence of temperature in targetat a certain laser fluence are presented,then,the transmitted intensity through plasma plume,space-dependence oftemperature and ablation rate for different laser fluences are significantly analyzed.As a result,the satisfactorily goodagreement between our numerical results and experimental results indicates that the influences of the dynamic absorp-tance,vaporization,and plasma shielding cannot be neglected.Taking all the three mechanisms above simultaneouslyinto account for the first time,we cause the present model to be more practical.

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.

Compact Co3O4/Co in-situ nanocomposites prepared by pulsed laser sintering as anode materials for lithium-ion batteries

With the development of portable electronic devices, electric vehicles, and power storage systems, the demand for rechargeable batteries with high energy density is growing rapidly [1–5]. In the field of lithium-ion batteries, the unconventional anode materials such as tin, silicon, metallic lithium, and transition-metal oxides have been extensively studied due to the high capacity, but they are still inapplicable because of the low initial coulombic efficiency(ICE) and/or the poor cycling stability [5–9].