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Optimization of large-area YBa_(2)Cu_(3)O_(7-δ)thin films by pulsed laser deposition for planar microwave devices
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作者 熊沛雨 陈赋聪 +8 位作者 冯中沛 杨景婷 夏钰东 袁跃峰 王旭 袁洁 吴云 石兢 金魁 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期186-190,共5页
This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ... This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices. 展开更多
关键词 YBCO films pulsed laser deposition(pld) surface resistance microwave devices
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Preparation of Highly Textured Bi and MnBi Films by the Pulsed Laser Deposition Method
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作者 周栋 张银峰 +5 位作者 马小柏 刘顺荃 韩景智 朱明刚 王常生 杨金波 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第12期139-142,共4页
Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoerciviti... Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer. 展开更多
关键词 BI Preparation of Highly Textured Bi and MnBi Films by the pulsed laser deposition method Mn Figure pld
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Ultra Short Pulsed Laser Deposition Technology for Industrial Applications 被引量:1
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作者 Dr Jari Liimatainen Ville Kekkonen Jarkko Piirto Juho Kaisto Dr Aleksey Zolotukhin Dr Saumyadip Chaudhuri 《材料科学与工程(中英文B版)》 2015年第5期196-205,共10页
关键词 脉冲激光沉积技术 工业应用 超短脉冲 pld技术 材料系统 重复频率激光 生产方法 化学计量
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Synthesis of Co-Cr-Mo Fluorapatite Nano-Composite Coatings by Pulsed Laser Deposition for Dental Applications
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作者 Osama Khfagi Ntevheleni Thovhogi +2 位作者 Dhiro Gihwala Malik Maaza Johan André Mars 《Materials Sciences and Applications》 2017年第2期135-152,共18页
Aim: The study was to fabricate FA nanopowder/Co-Cr-Mo dental alloy nanocomposite using pulsed laser deposition (PLD), and to evaluate bioactivity properties on simulated body fluid. Methods: In this work, the FA nano... Aim: The study was to fabricate FA nanopowder/Co-Cr-Mo dental alloy nanocomposite using pulsed laser deposition (PLD), and to evaluate bioactivity properties on simulated body fluid. Methods: In this work, the FA nanopowder was prepared by mixing calcium hydroxide (Ca(OH)2), phosphorouspent oxide (P2O5) and calcium fluoride (CaF2) in a planetary high energy ball mill using zirconium vial. Fluorapatite (FA) nanopowder was processed in the form of pellet for pulsed laser deposition process. The Co-Cr-Mo alloy was coated with FA nanopowder which was approximately 35 - 65 nm at various laser energy, pressure and time. The X-ray diffraction (XRD) was used to analyze phase, crystallinity and size distribution of Co-Cr-Mo/FA nanocomposite. The surface analysis was by scanning electron microscopy (SEM), Atomic Force microscopy (AFM) and Energy dispersive spectroscopy (EDS). Results: From the results obtained, It was shown that FA nanopowder deposited on Co-Cr-Mo alloy was stable during 14 days of incubation on simulated body fluid. It was also observed that the FA nanopowder coated on the surface of the alloy was still intact after the deposition process, which indicated the bioactivity and biocompatibility of the material. Conclusions: The fabrication of FA nanocomposite based dental alloys (Co-Cr-Mo) using PLD was done successfully. This was confirmed by various characterization techniques, which included XRD, AFM, SEM and EDS. 展开更多
关键词 BIOCOMPATIBILITY Cobalt-Chromium-Molybdenum ALLOYS DENTAL ALLOYS FLUORAPATITE pulsed laser deposition (pld) Simulated Body Fluid (SBF)
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Improvement of Surface Morphology of Yttrium-Stabilized Zirconia Films Deposited by Pulsed Laser Deposition on Rolling Assisted Biaxially Textured Substrate Tapes
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作者 王梦麟 刘林飞 李贻杰 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期101-105,共5页
The surface morphology of buffer layer yttrium-stabilized zirconia (YSZ) of YBa2CuaO7-σ (YBCO) high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we f... The surface morphology of buffer layer yttrium-stabilized zirconia (YSZ) of YBa2CuaO7-σ (YBCO) high temperature superconducting films relies on a series of controllable experimental parameters. In this work, we focus on the influence of pulsed laser frequency and target crystalline type on surface morphology of YSZ films deposited by pulsed laser deposition (PLD) on rolling assisted biaxially textured substrate tapes. Usually two kinds of particles are observed in the YSZ layer: randomly distributed ones on the whole film and self-assembled ones along grain boundaries. SEM images are used to prove that particles can be partly removed when choosing dense targets of single crystalline. Lower frequency of pulsed laser also contributes to a smoother film surface. TEM images are used to view the crystalline structure of thin film. Thus we can obtain a basic understanding of how to prepare a particle-free YSZ buffer layer for YBCO in optimized conditions using PLD. The YBCO layer with nice structure and critical current density of around 5 MA/cm2 can be reached on smooth YSZ samples. 展开更多
关键词 YSZ Improvement of Surface Morphology of Yttrium-Stabilized Zirconia Films deposited by pulsed laser deposition on Rolling Assisted Biaxially Textured Substrate Tapes pld
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Growth of GaN Thin Film by Pulsed Laser Deposition and Its Application on Ultraviolet Detectors
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作者 Dadi Rusdiana Maman Budiman Mochamad Barmawi 《材料科学与工程(中英文A版)》 2011年第3X期336-341,共6页
关键词 GAN薄膜 脉冲激光沉积 紫外探测器 薄膜生长 应用 纤锌矿结构 载流子浓度 电子迁移率
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Sol-Gel Derived La0.7Sr0.3MnO3 Thin Films by Pulsed Laser Deposition
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作者 Ali Abdel Aziemabdel Gaied Y. Badr +1 位作者 K. M. El-Khatib M. A. Hafez 《材料科学与工程(中英文B版)》 2016年第5期231-240,共10页
关键词 脉冲激光沉积 溶胶-凝胶法 薄膜 场发射扫描电子显微镜 高分辨透射电镜 退火温度 X射线衍射 制备
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Effect of Oxygen Pressure on the Optical, Morphology and Structural Properties of TiO2: Cr Thin Films Prepared by Pulsed Laser Deposition
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作者 Adawiya J. Haide Samar Y. AI-Dabagh Mirvat D. Majed 《材料科学与工程(中英文A版)》 2012年第3期346-351,共6页
关键词 脉冲激光沉积法 结构特性 二氧化钛 光学性质 铬薄膜 膜形态 紫外可见光谱 SI(111)
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Effect of Annealing on the Optical Properties of GaN Films Grown by Pulsed Laser Deposition 被引量:1
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作者 M.Baseer Haider M.F.Al-Kuhaili +1 位作者 S.M.A.Durrani Imran Bakhtiari 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2013年第8期752-756,共5页
In the present study, gallium nitride thin films were grown by using pulsed laser deposition. After the growth samples were annealed at 400 and 600 ℃ in the nitrogen atmosphere. Surface morphology of the as-grown and... In the present study, gallium nitride thin films were grown by using pulsed laser deposition. After the growth samples were annealed at 400 and 600 ℃ in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was observed by atomic force microscopy. Post-growth annealing results in an improved surface roughness of the films. Chemical analysis of the samples was performed by X-ray photoelectron spectroscopy. Stoichiometric gallium nitride thin films were obtained for the samples annealed at 600 ℃. Optical measurements of the samples were performed to measure the band gap and optical constants of the films. Effect of annealing on the band gap and optical constants of the films was studied. 展开更多
关键词 Gallium nitride pulsed laser deposition (pld Nitride semiconductors X-ray photoelectron spectroscopy (XPS) Transmittance spectra Optical constants
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Pulsed excimer laser deposition and characterization of ferroelectric lead-zirconate-titanate thin films
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作者 陈逸清 郑立荣 +2 位作者 张顺开 林成鲁 邹世昌 《Chinese Science Bulletin》 SCIE EI CAS 1995年第4期340-344,共5页
The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and ra... The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and radiation-hardness, very large (~1000) dielectric constant and polarizability, ferroelectric thin film and its application research have recently attracted great attention in newly functional materials and integrated devices such 展开更多
关键词 PZT pulseD laser deposition (pld) FERROELECTRIC thin film.
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Pulsed laser deposition of single-oriented superconducting Ba_(1-x)K_xBiO_3 thin films
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作者 吉争鸣 周军 +9 位作者 杨森祖 吴培亨 岳国森 刘治国 刘俊明 吴状春 张世远 许自然 张鸿才 穆仲良 《Chinese Science Bulletin》 SCIE EI CAS 1995年第8期686-689,共4页
The development of superconductor/insulator/superconductor(SIS)tunnel junctions inthe cuprate high-temperature superconductor family has been hampered by an anisotropicstructure and a coherence length ξ as short as... The development of superconductor/insulator/superconductor(SIS)tunnel junctions inthe cuprate high-temperature superconductor family has been hampered by an anisotropicstructure and a coherence length ξ as short as 0.3 nm. However, the discovery of Ba<sub>1-x</sub>K<sub>x</sub>-BiO<sub>3</sub>(x≈0.4) superconductor which is an isotropic cubic structure and has a 展开更多
关键词 pulsed laser deposition (pld) Ba1-x KxBiO3 (BKBO) coherence length single-oriented BKBO thin films.
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Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition
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作者 Jie JIANG Xue-tao WANG Li-ping ZHU Li-qiang ZHANG Zhi-guo YANG Zhi-zhen YE 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2011年第7期561-566,共6页
ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning elec... ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature. 展开更多
关键词 ZnNiO thin films Electric property FERROMAGNETIC TRANSMITTANCE pulsed laser deposition(pld)
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Density of states characterization of TiO_(2) films deposited by pulsed laser deposition for heterojunction solar cells
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作者 Daniele Scire Roberto Macaluso +4 位作者 Mauro Mosca Maria Pia Casaletto Olindo Isabella Miro Zeman Isodiana Crupi 《Nano Research》 SCIE EI CSCD 2022年第5期4048-4057,共10页
The application of titanium dioxide(TiO_(2))in the photovoltaic(PV)field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact.For m... The application of titanium dioxide(TiO_(2))in the photovoltaic(PV)field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact.For modeling-based optimization of such contact,knowledge of the titanium oxide defect density of states(DOS)is crucial.In this paper,we report a method to extract the defect density through nondestructive optical measures,including the contribution given by small polaron optical transitions.The presence of both related to oxygen-vacancy defects and polarons is supported by the results of optical characterizations and the evaluation of previous observations resulting in a defect band fixed at 1 eV below the conduction band edge of the oxide.Solar cells employing pulsed laser deposited-TiO_(2)electron selective contacts were fabricated and characterized.The J-V curve of these cells showed,however,an S-shape,then a detailed analysis of the reasons for such behavior was carried out.We use a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances.A good matching between the experimental measurements and the adopted theoretical model was obtained.The extracted parameters are listed and analyzed to shed light on the reasons behind the low-performance cells. 展开更多
关键词 solar cell HETEROJUNCTION photovoltaic(PV) defect density small polaron pulsed laser deposition(pld) titanium dioxide(TiO_(2)) defects
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Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition
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作者 WANG FengYing WANG RuZhi ZHAO Wei SONG XueMei WANG Bo YAN Hui 《Science in China(Series F)》 2009年第10期1947-1952,共6页
Amorphous gallium nitride (a-GaN) films with thicknesses of 5 and 300 nm are deposited on n-Si (100) substrates by pulsed laser deposition (PLD), and their field emission (FE) properties are studied. It shows ... Amorphous gallium nitride (a-GaN) films with thicknesses of 5 and 300 nm are deposited on n-Si (100) substrates by pulsed laser deposition (PLD), and their field emission (FE) properties are studied. It shows that compared with thicker (300 nm) a-GaN film, better FE performance is obtained on ultrathin (5 nm) a-GaN film with a threshold field of 0.78 V/μm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/μm. These experimental results unambiguously confirm Binh's theoretical analysis (Binh et al. Phys Rev Lett, 2000, 85(4): 864-867) that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film. 展开更多
关键词 field emission amorphous gallium nitride (a-GaN) pulsed laser deposition (pld) work function
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PLD方法制备的纳米Fe/Al薄膜的结构及应力分析 被引量:4
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作者 王锋 李俊 +3 位作者 李国俊 吴卫东 唐永健 孙卫国 《强激光与粒子束》 EI CAS CSCD 北大核心 2005年第9期1387-1390,共4页
采用PLD方法制备了Fe/Al合金薄膜,研究了Fe/Al合金薄膜的物相、结构、应力等。研究表明薄膜的沉积速率随着衬底温度的升高而降低。原子力显微镜(AFM)图像显示,薄膜表面平整、致密且光滑,均方根粗糙度小于1 nm。等离子体发射谱(ICP)表明F... 采用PLD方法制备了Fe/Al合金薄膜,研究了Fe/Al合金薄膜的物相、结构、应力等。研究表明薄膜的沉积速率随着衬底温度的升高而降低。原子力显微镜(AFM)图像显示,薄膜表面平整、致密且光滑,均方根粗糙度小于1 nm。等离子体发射谱(ICP)表明Fe/Al原子比为1∶1。X射线小角衍射(XRD)分析表明薄膜中的物相是Al0.5Fe0.5,Al0.5Fe0.5晶体具有简单立方结构(SC),晶格常数为0.297 nm,平均晶粒尺寸为81.74 nm,平均微畸变为0.007 6。 展开更多
关键词 脉冲激光沉积(pld) Fe/Al合金薄膜 原子力显微镜(AFM) X射线衍射(XRD)
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Zn_(0.9)Mg_(0.1)O:Ga宽带隙导电膜的PLD制备及性能研究 被引量:3
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作者 陈志强 方国家 +2 位作者 李春 盛苏 赵兴中 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2006年第3期707-712,共6页
利用脉冲激光沉积法(PLD)制备了Ga掺杂的Zn0.9Mg0.1O(ZMO:Ga)宽带隙透明导电薄膜.采用各种分析手段研究了沉积温度和真空退火处理对薄膜结构、表面形貌及光电性能的影响.结果表明,制备的薄膜具有ZnO(002)择优取向;200℃下沉积的薄... 利用脉冲激光沉积法(PLD)制备了Ga掺杂的Zn0.9Mg0.1O(ZMO:Ga)宽带隙透明导电薄膜.采用各种分析手段研究了沉积温度和真空退火处理对薄膜结构、表面形貌及光电性能的影响.结果表明,制备的薄膜具有ZnO(002)择优取向;200℃下沉积的薄膜通过3×10-3Pa 的真空400℃退火2h后,其电阻率由8.12×10-4Ω·cm减小到4.74×10-4Ω·cm,禁带宽度则由原来的3.83eV增加到3.90eV.退火处理增强了薄膜的择优取向和结晶度,增加了禁带宽度、提高了载流子浓度并使其透射谱线的光学吸收边发生蓝移现象. 展开更多
关键词 ZnMgO:Ga膜 脉冲激光沉积 沉积温度 真空退火
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激光频率对用PLD法生长氧化锌薄膜特性的影响 被引量:2
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作者 吴木生 叶志清 +2 位作者 王根生 邓海东 欧阳桂仓 《江西师范大学学报(自然科学版)》 CAS 北大核心 2008年第1期55-57,共3页
用脉冲激光沉积法(PLD)在硅(100)衬底上制备了c轴取向的高质量的ZnO薄膜.分析了不同激光频率下薄膜的结晶状况,通过对薄膜的PL谱的测试,分析了不同激光频率下薄膜的发光特性状况,同时进行了薄膜结构的测试.结果显示:激光频率为3 Hz的样... 用脉冲激光沉积法(PLD)在硅(100)衬底上制备了c轴取向的高质量的ZnO薄膜.分析了不同激光频率下薄膜的结晶状况,通过对薄膜的PL谱的测试,分析了不同激光频率下薄膜的发光特性状况,同时进行了薄膜结构的测试.结果显示:激光频率为3 Hz的样品结晶质量较高,具有很高的c轴择优取向,同时发光性能达到相对优化. 展开更多
关键词 脉冲激光沉积法 氧化锌 X射线衍射 激光频率 光致发光
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PLD法生长高质量ZnO薄膜及其光电导特性研究 被引量:2
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作者 边继明 李效民 +1 位作者 赵俊亮 于伟东 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2006年第3期701-706,共6页
采用脉冲激光沉积(PLD)法在单晶Si(100)衬底上生长ZnO薄膜,以X射线衍射 (XRD)和场发射扫描电镜(SEM)等手段分析了所得ZnO薄膜的晶体结构和微观形貌.结果表明,随着衬底温度和薄膜生长时氧分压的增加, ZnO薄膜的晶体结构和化学计量比得... 采用脉冲激光沉积(PLD)法在单晶Si(100)衬底上生长ZnO薄膜,以X射线衍射 (XRD)和场发射扫描电镜(SEM)等手段分析了所得ZnO薄膜的晶体结构和微观形貌.结果表明,随着衬底温度和薄膜生长时氧分压的增加, ZnO薄膜的晶体结构和化学计量比得到显著改善.优化工艺(700℃,20Pa)下生长的ZnO薄膜呈c轴高度择优取向,柱状晶垂直衬底表面生长,结构致密均匀.以不同暗电阻的ZnO薄膜为材料,利用剥离(lift-off)技术制备了MSM 结构ZnO光电导型紫外探测器.紫外光照射前后的I—V特性测试表明ZnO薄膜产生非常明显的光电导现象,分析了其光电响应机理. 展开更多
关键词 ZNO薄膜 脉冲激光沉积 光电导紫外探测器 光电响应机理
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氧离子束辅助PLD法生长ZnO/Si的XPS研究 被引量:2
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作者 李庚伟 吴正龙 刘志凯 《渤海大学学报(自然科学版)》 CAS 2007年第1期24-27,共4页
利用X射线光电子能谱(XPS)深度剖析方法对ZnO/Si异质结构同一典型样品的不同部位进行了分析。讨论了同时刻(厚度)样品的生长情况及所说明的问题。提出要使样品生长得更理想,应做到使DIBD系统连续工作。
关键词 ZnO/Si异质结构 X射线光电子能谱(XPS) 氧离子束辅助(O^+-assisted)pld
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溅射Ga_2O_3反应自组装和脉冲激光沉积(PLD)法制备GaN薄膜 被引量:1
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作者 伊长虹 孙振翠 +3 位作者 刘玫 张庆刚 满宝元 薛成山 《山东师范大学学报(自然科学版)》 CAS 2007年第4期55-57,共3页
用溅射Ga2O3反应自组装和脉冲激光沉积(PLD)法分别在硅和蓝宝石衬底上制备CaN薄膜,用X射线衍射图谱(XRD)和原子力显微镜(AFM)对GaN薄膜的结构和形貌进行分析,结果表明,采用两种方法在两种衬底上均可制备出结晶较好的CaN薄膜,但硅衬底上... 用溅射Ga2O3反应自组装和脉冲激光沉积(PLD)法分别在硅和蓝宝石衬底上制备CaN薄膜,用X射线衍射图谱(XRD)和原子力显微镜(AFM)对GaN薄膜的结构和形貌进行分析,结果表明,采用两种方法在两种衬底上均可制备出结晶较好的CaN薄膜,但硅衬底上制备的GaN薄膜的晶粒明显大于在蓝宝石衬底上制备的GaN薄膜的晶粒,进一步表明硅基溅射Ga2O3反应自组装GaN薄膜晶化程度较高. 展开更多
关键词 溅射Ga2O3反应自组装 脉冲激光沉积(pld) CaN薄膜
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