The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UH...The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.展开更多
基金Supported by the National Natural Science Foundation of China (No. 60476017)the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
文摘The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.
