The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device performance.Dielectric force microscopy(DFM)has been previously developed to map charge carri...The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device performance.Dielectric force microscopy(DFM)has been previously developed to map charge carrier concentrations with nanometer-scale spatial resolution.However,it is challenging to quantitatively obtain the charge carrier concentration,since the dielectric force is also affected by the mobility.Here,we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of DFM.By measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime,we confirmed the decreased DFM-measured gating ratio with increasing electron concentration.Combined with numerical simulation to calibrate the tip–sample geometry-induced systematic error,the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established,where the extracted electron concentration presents high accuracy in the range of 4×10^(16)–1×10^(18)cm^(-3).We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.展开更多
Invisible orthodontic treatment is an effective form of malocclusion treatment favored in recent years.The magnitude of its orthodontic force has a crucial impact on the outcome of the treatment and has gained a high ...Invisible orthodontic treatment is an effective form of malocclusion treatment favored in recent years.The magnitude of its orthodontic force has a crucial impact on the outcome of the treatment and has gained a high level of clinical interest.However,there are very few explorations of in vivo measurements of orthodontic force,and existing studies are limited to a large number of couplings,which are inconvenient for clinical use.In this work,we developed a wireless flexible measurement system that allows quantitative measurement of the orthodontic force of an invisible aligner on a dental model.The system is wireless,tiny,flexible,fast responding,and has a range suitable for the range of orthodontic forces.We show the difference in the orthodontic force applied to different tooth positions and the difference in the orthodontic force applied to different positions of the same tooth.In addition,the system can evaluate the mechanical differences between aligners of different brands and materials as well as the deviation of fabrication results.This system provides a test tool and evaluation method for future real-time assessment of clinical orthodontic forces.展开更多
基金Project supported by the National Key R&D Program of China (Grant No. 2021YFA1202802)the National Natural Science Foundation of China (Grant Nos. 21875280,21991150, 21991153, and 22022205)+1 种基金the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-054)the Special Foundation for Carbon Peak Neutralization Technology Innovation Program of Jiangsu Province,China(Grant No. BE2022026)
文摘The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device performance.Dielectric force microscopy(DFM)has been previously developed to map charge carrier concentrations with nanometer-scale spatial resolution.However,it is challenging to quantitatively obtain the charge carrier concentration,since the dielectric force is also affected by the mobility.Here,we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of DFM.By measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime,we confirmed the decreased DFM-measured gating ratio with increasing electron concentration.Combined with numerical simulation to calibrate the tip–sample geometry-induced systematic error,the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established,where the extracted electron concentration presents high accuracy in the range of 4×10^(16)–1×10^(18)cm^(-3).We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.
基金Beijing Natural Science Foundation(L232109)National Natural Science Foundation of China(No.12202274 and No.52171234)+1 种基金Fundamental Research Funds for the Central Universities(YWF-22-K-101)National Key Research and Development Project(Nos.2021YFC2400703 and 2019YFE0101100).
文摘Invisible orthodontic treatment is an effective form of malocclusion treatment favored in recent years.The magnitude of its orthodontic force has a crucial impact on the outcome of the treatment and has gained a high level of clinical interest.However,there are very few explorations of in vivo measurements of orthodontic force,and existing studies are limited to a large number of couplings,which are inconvenient for clinical use.In this work,we developed a wireless flexible measurement system that allows quantitative measurement of the orthodontic force of an invisible aligner on a dental model.The system is wireless,tiny,flexible,fast responding,and has a range suitable for the range of orthodontic forces.We show the difference in the orthodontic force applied to different tooth positions and the difference in the orthodontic force applied to different positions of the same tooth.In addition,the system can evaluate the mechanical differences between aligners of different brands and materials as well as the deviation of fabrication results.This system provides a test tool and evaluation method for future real-time assessment of clinical orthodontic forces.
