GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron Wavelength

GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Highly stained InGaAs/GaAs Quantum Wells (QW) are grown by using molecular beam epitaxy.The room-temperature photoluminescence (PL) peak wavelength as long as 1160nm is obtained from QW with the In composition of 38% and the well width of 6 8nm.The full-width at half-maximum of the PL peak is 22meV,indicating a good quality.InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120nm are demonstrated.For 100-μm-wide ridge-waveguide lasers with a cavity length of 800μm,the kink-free output power up to 200mW is achieved with the slope efficiency of 0 84mW/mA under the continue-wave operation.For 10μm-wide ridge-waveguide lasers,the lowest threshold current density of 450A/cm2 and the characteristic temperature of 90K are obtained.

Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser

Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.

A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers

In this study we investigate strain effect in barriers of 1.3 μm AlCalnAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Harniltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 ℃. 20% improvement in mode gain-current density characteristic is also obtained in 85 ℃.

Dynamic characteristics in an external-cavity multi-quantum-well laser

This paper outlines our studies of bifurcation, quasi-periodic road to chaos and other dynamic characteristics in an external-cavity multi-quantum-well laser with delay optical feedback. The bistable state of the laser is predicted by finding theoretically that the gain shifts abruptly between two values due to the feedback. We make a linear stability analysis of the dynamic behavior of the laser. We predict the stability scenario by using the characteristic equation while we make an approximate analysis of the stability of the equilibrium point and discuss the quantitative criteria of bifurcation. We deduce a formula for the relaxation oscillation frequency and prove theoretically that this formula function relates to the loss of carriers transferring between well regime and barrier regime, the feedback level, the delayed time and the other intrinsic parameters. We demonstrate the dynamic distribution and double relaxation oscillation frequency abruptly changing in periodic states and find the multi-frequency characteristic in a chaotic state. We illustrate a road to chaos from a stable state to quasi-periodic states by increasing the feedback level. The effects of the transfers of carriers and the escaping of carriers on dynamic behavior are analyzed, showing that they are contrary to each other via the bifurcation diagram. Also,we show another road to chaos after bifurcation through changing the linewidth enhancement factor, the photon loss rate and the transfer rate of carriers.

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect （QCSE） in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.

Passive Model-locking of 1.5μm InGaAsP Quantum Well Lasers

The generation of ultrashort optical pulse from passively mode-locked InGaAs/InGaAsP quantum well laser diodes is reported. The device consists of two segments: one is reversedly biased as a saturable absorber and the other is current forward injected as a gain segment. The optical pulse with 7.8ps duration at 26 GHz repetition rate has been measured from the passively mode-locked laser with 1.625μm cavity length and 1.53μm emitting wavelength. Some simple descriptions of PMLD characteristics are also given.

Laser-field-induced magnon amplification in a magnetic semiconductor quantum well under an external magnetic field

The laser-field induced magnon amplification in a magnetic semiconductorquantum well under an external magnetic field was discussed, it is shown that when the laserfrequency is near to the electron cyclotron frequency, no matter how weaker the laser field is, themagnon amplification always occurs. In case of fixed laser frequency, the optical absorption ofmagnons obeys the definite selection rule to the laser field strength. The rate of change of magnonoccupation is calculated, and the amplification condition is given.

An optically pumped GaN/AlGaN quantum well intersubband terahertz laser

We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical（LO） phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.

Non-perturbative multiphoton excitation studies in an excitonic coupled quantum well system using high-intensity THz laser fields

Multiphoton excitations and nonlinear optical properties of exciton states in GaAs/AlxGa1-xAs coupled quantum well structure have been theoretically investigated under the influence of a time-varying high-intensity terahertz(THz)laser field.Non-perturbative Floquet theory is employed to solve the time-dependent equation of motion for the laser-driven excitonic quantum well system.The response to the field parameters,such as intensity and frequency of the laser electric field on the state populations,can be used in various optical semiconductor device applications,such as photodetectors,sensors,all-optical switches,and terahertz emitters.

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting laser （VCSEL） based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed opera- tion. While under continuous-wave （CW） operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12°C to 96 °C and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantum well for 1065 nm wavelength lasers

Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).

Terahertz Semiconductor Quantum Well Devices

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated.The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons.Background limited infrared performance (BLIP) operations are observed for all samples (three in total),designed for different wavelengths.BLIP temperatures of 17,13,and 12K are achieved for peak detection frequencies of 9.7THz(31μm),5.4THz(56μm),and 3.2THz(93μm),respectively.A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied.The δ-doping density for each period varies from 3.2×1010 to 4.8×1010cm-2.We observe that the lasing threshold current density increases monotonically with doping concentration.Moreover,the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically.Interestingly the observed maximum lasing temperature is best at a doping density of 3.6×1010cm-2.

高性能锑化物中红外半导体激光器的研究进展

半导体材料体系经历了3次重要迭代,在微电子、通信、人工智能、碳中和等重要领域得到了广泛应用。随着高新技术的快速发展,锑化物半导体作为最具发展前景的第4代半导体材料之一,在开发下一代高性能、小体积、低功耗、低成本的红外光电器件领域具有独特的优势和广阔的应用前景。综述了锑化物半导体激光器的发展过程和国内外的研究现状,分析了器件结构设计、材料外延、模式选择、波长扩展等关键问题,阐述了采用分子束外延技术生长高性能锑化物量子阱激光器,实现大功率、单模、高光束质量的锑化物激光器的设计方案和关键工艺技术,并对兼具低成本、高成品率、大功率等优异特性的单模锑化物激光器的研究前景进行了展望。

Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究

在GaAs基GaInP/AlGaInP单量子阱结构外延片上分别使用磁控溅射设备生长ZnO薄膜和等离子增强化学气相沉积设备生长SiO2薄膜,以ZnO介质层作为Zn杂质诱导源,采用固态扩Zn的方式对激光器进行选择性区域诱导以制备非吸收窗口来提高器件的腔面光学灾变损伤阈值,从而提高半导体激光器的输出功率和长期可靠性。在580~680℃、20~60 min退火条件下对Zn杂质诱导量子阱混杂展开研究,实验发现,ZnO/SiO2或ZnO/Si3N4复合介质层的采用比单一Zn介质层的杂质诱导蓝移量大,且在680℃、30 min的条件下获得了最大55 nm的蓝移量。分析结果表明,介质层所施加的压应变会将外延片表面GaAs层中Ga原子析出,促使Zn原子进入外延层中以诱导量子阱混杂。通过测量光致发光光谱发现发光强度并没有明显下降,可为后期器件制作提供借鉴。

高功率1150 nm垂直外腔面发射半导体激光器

针对目前激光医疗、食品药品检测等领域对橙黄色激光的应用需求,开展了高功率基频光1150 nm垂直外腔面发射半导体激光器(VECSEL)研究。提出激光谐振腔内大尺寸基模光斑外腔结构,使VECSEL腔内模式匹配较大泵浦光斑尺寸,实现了高功率激光输出;提出增益峰-腔模失谐结构,增益峰与腔模温漂系数不同,高泵浦功率下具有良好的增益峰-腔模匹配,实现高泵浦功率工作下的激光波长稳定控制。制备的VECSEL器件在1150 nm激光波长的输出功率达到9.38 W,并获得良好的圆形对称的输出光斑形貌,光斑在正交方向上的发散角分别为7.3°和7.5°。

Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector （DBR） composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing （QWI） technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.

Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser （VCSEL） in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laserchips have been investigated. The results show that, by measuring andanalyzing the I- V characteristics under appropriate pulse drivingconditions at different has sink Temperatures, the thermal resistanceof the laser diodes could be easily deduced. The driving Current andjunction voltage waveforms of the laser ships under different pulsedriving Conditions are also discussed.