We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabri...We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.展开更多
Based on the analytical expression of relativistic free energy for a weakly interacting Fermi gas in a weak magnetic field, by using the method of quantum statistics, the stability conditions of the system at both hig...Based on the analytical expression of relativistic free energy for a weakly interacting Fermi gas in a weak magnetic field, by using the method of quantum statistics, the stability conditions of the system at both high and low temperatures are given, and the effects of magnetic field and interparticle interactions on the stability of the system are analysed. It is shown that at high temperatures, the stability conditions of the system are completely the same, no matter whether it is the ultrarelativistic case or nonrelativistic case. At extremely low temperatures, the mechanical stability conditions of the system show a similar rule through a comparison between the ultrarelativistic case and nonrelativistic case. At the same time, thermal stability of a relativistic Bose gas in a weak magnetic field is discussed, and the influence of the effect of relativity on the thermal stability of the system is investigated.展开更多
The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorph...The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.展开更多
Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells （namely triple wells and five wells embedded） and bulk InCaAs are investigated after high energy electron irradiation. It...Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells （namely triple wells and five wells embedded） and bulk InCaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence （PL） intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47 As wells and InP barrier layers.展开更多
Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-con...Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.展开更多
We continue to analyse the known law of adiabatic transformation for an ideal gas PV5/3=Constant, where P isthe pressure and V is the volume, and following the approach of non-relativistic quantum mechanics which we s...We continue to analyse the known law of adiabatic transformation for an ideal gas PV5/3=Constant, where P isthe pressure and V is the volume, and following the approach of non-relativistic quantum mechanics which we suggested in a previous work （Yarman et al. 2010 Int. J. Phys. Sci. 5 1524）. We explicitly determine the constant for the general parallelepiped geometry of a container. We also disclose how the quantum numbers associated with molecules of an ideal gas vary through an arbitrary adiabatic transformation. Physical implications of the results obtained are discussed.展开更多
Based on the state equation of an ideal quantum gas, the regenerative loss of a Stirling engine cycle working with an ideal quantum gas is calculated. Thermal efficiency of the cycle is derived. Furthermore, under the...Based on the state equation of an ideal quantum gas, the regenerative loss of a Stirling engine cycle working with an ideal quantum gas is calculated. Thermal efficiency of the cycle is derived. Furthermore, under the condition of quantum degeneracy, several special thermal efficiencies are discussed. Ratios of thermal efficiencies versus the temperature ratio and volume ratio of the cycle are made. It is found that the thermal efficiency of the cycle not only depends on high and low temperatures but also on maximum and minimum volumes. In a classical gas state the thermal efficiency of the cycle is equal to that of the Carnot cycle. In an ideal quantum gas state the thermal efficiency of the cycle is smaller than that of the Carnot cycle. This will be significant for deeper understanding of the gas Stirling engine cycle.展开更多
The instability of terahertz（THz）plasma waves in two-dimensional（2D）quantum electron gas in a nanometer field effect transistor（FET）with asymmetrical boundary conditions has been investigated.We analyze THz plas...The instability of terahertz（THz）plasma waves in two-dimensional（2D）quantum electron gas in a nanometer field effect transistor（FET）with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas：gated and ungated regions.The results show that the radiation frequency and the increment（radiation power）in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.展开更多
One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi ...One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.展开更多
An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employe...An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employed for studying how the Functional Eigenstate of the Two-Dimensional Electron Gas (2DEG) dwelling within the Quantum Well of a typical Semiconductor Nanoheterointerface evolves versus (cryptographically) selectable consecutive Cumulative Photon Dose values. Thus, it is ultimately discussed that the experimentally observed (after a Critical Cumulative Photon Dose) Phenomenon of 2DEG Negative Differential Mobility allows for the Nanosystem to exhibit an Effective Qubit Specific Functionality potentially conducive to (Telecommunication) Quantum Information Registering.展开更多
基金supported in part by NSERC. HCL thanks the support by the National Ma jor Basic Research Pro jects (2011CB925603)Shanghai Municipal Ma jor Basic Research Pro ject (09DJ1400102)
文摘We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.
文摘Based on the analytical expression of relativistic free energy for a weakly interacting Fermi gas in a weak magnetic field, by using the method of quantum statistics, the stability conditions of the system at both high and low temperatures are given, and the effects of magnetic field and interparticle interactions on the stability of the system are analysed. It is shown that at high temperatures, the stability conditions of the system are completely the same, no matter whether it is the ultrarelativistic case or nonrelativistic case. At extremely low temperatures, the mechanical stability conditions of the system show a similar rule through a comparison between the ultrarelativistic case and nonrelativistic case. At the same time, thermal stability of a relativistic Bose gas in a weak magnetic field is discussed, and the influence of the effect of relativity on the thermal stability of the system is investigated.
基金the National Natural Science Foundation of China under Grant Nos 61274069,61176053 and 61021003the National High-Technology Research and Development Program of China under Grant No 2012AA012202the National Basic Research Program of China under Grant Nos 2012CB933503 and 2013CB932904.
文摘The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.
文摘Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells （namely triple wells and five wells embedded） and bulk InCaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence （PL） intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47 As wells and InP barrier layers.
基金Supported by the National Basic Research Program of China under Grant No 2014CB643902the Key Program of Natural Science Foundation of China under Grant No 61334004+3 种基金the National Natural Science Foundation of China under Grant No 61404152the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA5-1the Foundation of National Laboratory for Infrared Physics,the Key Research Program of the Chinese Academy of Sciences under Grant No KGZDEW-804the Creative Research Group Project of Natural Science Foundation of China under Grant No 61321492
文摘Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.
文摘We continue to analyse the known law of adiabatic transformation for an ideal gas PV5/3=Constant, where P isthe pressure and V is the volume, and following the approach of non-relativistic quantum mechanics which we suggested in a previous work （Yarman et al. 2010 Int. J. Phys. Sci. 5 1524）. We explicitly determine the constant for the general parallelepiped geometry of a container. We also disclose how the quantum numbers associated with molecules of an ideal gas vary through an arbitrary adiabatic transformation. Physical implications of the results obtained are discussed.
基金Project supported by the National Natural Science Foundation of China （Grant No 10465003）, the Natural bcience Poundation of Jiangxi Province, China. （Grant No 0412011） and Science Foundation of Jiangxi Education Bureau, China.
文摘Based on the state equation of an ideal quantum gas, the regenerative loss of a Stirling engine cycle working with an ideal quantum gas is calculated. Thermal efficiency of the cycle is derived. Furthermore, under the condition of quantum degeneracy, several special thermal efficiencies are discussed. Ratios of thermal efficiencies versus the temperature ratio and volume ratio of the cycle are made. It is found that the thermal efficiency of the cycle not only depends on high and low temperatures but also on maximum and minimum volumes. In a classical gas state the thermal efficiency of the cycle is equal to that of the Carnot cycle. In an ideal quantum gas state the thermal efficiency of the cycle is smaller than that of the Carnot cycle. This will be significant for deeper understanding of the gas Stirling engine cycle.
基金supported by National Natural Science Foundation of China(No.10975114)
文摘The instability of terahertz（THz）plasma waves in two-dimensional（2D）quantum electron gas in a nanometer field effect transistor（FET）with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas：gated and ungated regions.The results show that the radiation frequency and the increment（radiation power）in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.
文摘One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.
文摘An “Eigenstate Adjustment Autonomy” Model, permeated by the Nanosystem’s Fermi Level Pinning along with its rigid Conduction Band Discontinuity, compatible with pertinent Experimental Measurements, is being employed for studying how the Functional Eigenstate of the Two-Dimensional Electron Gas (2DEG) dwelling within the Quantum Well of a typical Semiconductor Nanoheterointerface evolves versus (cryptographically) selectable consecutive Cumulative Photon Dose values. Thus, it is ultimately discussed that the experimentally observed (after a Critical Cumulative Photon Dose) Phenomenon of 2DEG Negative Differential Mobility allows for the Nanosystem to exhibit an Effective Qubit Specific Functionality potentially conducive to (Telecommunication) Quantum Information Registering.
