A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a be...A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.展开更多
The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the inj...The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.展开更多
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of...A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.展开更多
A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Li...A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Littrow telescope-less configuration. The swept laser generates greater than 54-m W peak output power and up to 33-k Hz sweep rate with a sweep range of 150 nm centered at 1155 nm. The effects of injection current and sweep rate on the sweep performance of the swept laser are studied.展开更多
A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss an...A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.展开更多
A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity le...A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.展开更多
The use of cavity to manipulate photon emission of quantum dots （QDs） has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular...The use of cavity to manipulate photon emission of quantum dots （QDs） has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells （QWs） to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers （VECSELs）. In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electro- dynamics （QED）, a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits （MPhlCs）.展开更多
An external cavity quantum cascade laser （QCL） array with a wide tuning range and high output power is pre- sented. The coherent QCL array combined with a diffraction grating and gold mirror is tuned in the Littrow ...An external cavity quantum cascade laser （QCL） array with a wide tuning range and high output power is pre- sented. The coherent QCL array combined with a diffraction grating and gold mirror is tuned in the Littrow configuration. Taking advantage of the single-lobed fundamental supermode far-field pattern, the tuning capa- bility of 30.6cm-1 is achieved with a fixed injected current of 3.5 A at room temperature. Single-mode emission can be observed in the entire process. The maximum single-mode output power of the external cavity setup is as high as 25mW and is essential in real applications.展开更多
基金Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106)
文摘A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot （QD） superluminescent diode （SLD） as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection （AR） coating. Tuning bandwidths of 106 nm and 117 nm are achieved under a-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61274072, 60976057, 61176047, and 60876086)
文摘The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037)
文摘A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274072)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Littrow telescope-less configuration. The swept laser generates greater than 54-m W peak output power and up to 33-k Hz sweep rate with a sweep range of 150 nm centered at 1155 nm. The effects of injection current and sweep rate on the sweep performance of the swept laser are studied.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274072)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274072,60976057,and 60876086)
文摘A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.
文摘The use of cavity to manipulate photon emission of quantum dots （QDs） has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells （QWs） to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers （VECSELs）. In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electro- dynamics （QED）, a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits （MPhlCs）.
基金Supported by the National Basic Research Program of China under Grant No 2013CB632801the National Key Research and Development Program of China under Grant No 2016YFB0402303+2 种基金the National Natural Science Foundation of China under Grant Nos 61435014,61627822,61574136,61306058 and 61404131the Key Projects of Chinese Academy of Sciences under Grant No ZDRW-XH-2016-4the Beijing Natural Science Foundation under Grant No 4162060
文摘An external cavity quantum cascade laser （QCL） array with a wide tuning range and high output power is pre- sented. The coherent QCL array combined with a diffraction grating and gold mirror is tuned in the Littrow configuration. Taking advantage of the single-lobed fundamental supermode far-field pattern, the tuning capa- bility of 30.6cm-1 is achieved with a fixed injected current of 3.5 A at room temperature. Single-mode emission can be observed in the entire process. The maximum single-mode output power of the external cavity setup is as high as 25mW and is essential in real applications.
