Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

Impedance spectroscopy for quantum dot light-emitting diodes

Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

Proton‑Prompted Ligand Exchange to Achieve High‑Efficiency CsPbI_(3) Quantum Dot Light‑Emitting Diodes

CsPbI_(3)perovskite quantum dots(QDs)are ideal materials for the next generation of red light-emitting diodes.However,the low phase stability of CsPbI_(3)QDs and long-chain insulating capping ligands hinder the improvement of device performance.Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control.Here,we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI_(3)QDs.This exchange strategy maintained the size and morphology of CsPbI_(3)QDs and improved the optical properties and the conductivity of CsPbI_(3)QDs films.As a result,high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45%and an operational half-life of 10.79 h.

Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr_(3) quantum dots

All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.

Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Advantageous properties of halide perovskite quantum dots towards energy-efficient sustainable applications

As lead halide perovskite(LHP)semiconductors have shown tremendous promise in many application fields,and particularly made strong impact in the solar photovoltaic area,low dimensional quantum dot forms of these perovskites are showing the potential to make distinct marks in the fields of electronics,optoelectronics and photonics.The so-called perovskite quantum dots(PQDs)not only possess the most important features of LHP materials,i.e.,the unusual high defect tolerance,but also demonstrate clear quantum size effects,along with exhibiting desirable optoelectronic properties such as near perfect photoluminescent quantum yield,multiple exciton generation and slow hot-carrier cooling.Here,we review the advantageous properties of these nanoscale perovskites and survey the prospects for diverse applications which include lightemitting devices,solar cells,photocatalysts,lasers,detectors and memristors,emphasizing the distinct superiorities as well as the challenges.

Paving continuous heat dissipation pathways for quantum dots in polymer with orangeinspired radially aligned UHMWPE fibers

Thermal management of nanoscale quantum dots(QDs)in light-emitting devices is a long-lasting challenge.The existing heat transfer reinforcement solutions for QDs-polymer composite mainly rely on thermal-conductive fillers.However,this strategy failed to deliver the QDs’heat generation across a long distance,and the accumulated heat still causes considerable temperature rise of QDs-polymer composite,which eventually menaces the performance and reliability of lightemitting devices.Inspired by the radially aligned fruit fibers in oranges,we proposed to eliminate this heat dissipation challenge by establishing long-range ordered heat transfer pathways within the QDs-polymer composite.Ultrahigh molecular weight polyethylene fibers(UPEF)were radially aligned throughout the polymer matrix,thus facilitating massive efficient heat dissipation of the QDs.Under a UPEF filling fraction of 24.46 vol%,the in-plane thermal conductivity of QDs-radially aligned UPEF composite(QDs-RAPE)could reach 10.45 W m^(−1) K^(−1),which is the highest value of QDs-polymer composite reported so far.As a proof of concept,the QDs’working temperature can be reduced by 342.5℃ when illuminated by a highly concentrated laser diode(LD)under driving current of 1000 mA,thus improving their optical performance.This work may pave a new way for next generation high-power QDs lighting applications.

Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer

In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.

GO-induced effective interconnection layer for all solution-processed tandem quantum dot light-emitting diodes

Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.

Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model:Influence of quantum dot concentration

We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots(QDs).To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs,the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken,and the corresponding calculations were performed based on the proposed model.The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device.Then,based on the continuity equation for singlet and triplet excitons,the exciton density profiles of the devices with different QD concentrations were extracted.Subsequently,the corresponding luminance characteristics of the devices were calculated,where the results are in good agreement with the experimental data.

Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes

Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes （ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT：PSS/A1）. By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles＇ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold （from 14600 cd/cm2 to 20720 cd/cm2） and maximum current efficiency is improved by 1.29 fold （from 3.12 cd/A to 4.02 cd/A）.

Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes

This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.

Blue InGaN light-emitting diodes with dip-shaped quantum wells

InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure with dip- aped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on Lmerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed ainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells （MQWs）.

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection

Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.

Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode

In GaN/GaN multiple quantum well（MQW） green light-emitting diodes（LEDs） with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well（QW） thickness. When the QW is very thin, the increase of In GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect.

Investigation of operation and degradation mechanisms in ZnTeSe blue quantum-dot light-emitting diodes by identifying recombination zone

ZnTeSe quantum dots(QDs),recognized as promising eco-friendly blue electroluminescent emitters,remain under-explored in light-emitting diode(LED)applications.Here,to elucidate the operation and degradation mechanisms of ZnTeSe blue QD-LEDs,stacked ZnTeSe QD layers with discernable luminescence are designed by varying Te doping concentrations,and the recombination zones(RZs)of the blue QD-LEDs are investigated.The RZs are identified near the hole-transport layer(HTL),confirmed by angular-dependent electroluminescence measurements and optical simulations.In addition,in order to investigate carrier dynamics in the process of recombination,the transient electroluminescence(tr-EL)signals of the dichromatic QD-LEDs are analyzed.As a result,it is inferred that the RZ initially formed near the electron-transport layer(ETL)due to the high injection barriers of electrons.However,due to the fast electron mobility,the RZ shifts toward the HTL as the operating current increases.After the device lifetime tests,the RZ remains stationary while the photoluminescence(PL)corresponding to the RZ undergoes a substantial decrease,indicating that the degradation is accelerated by the concentrated RZ.Thus this study contributes to a deeper understanding of the operational mechanisms of ZnTeSe blue QD-LEDs.