Using the scattering-matrix method, we investigate the thermal conductance in a two-slit quantum waveguide at low temperature. The results show that the total thermal conductance decreases monotonically with temperatu...Using the scattering-matrix method, we investigate the thermal conductance in a two-slit quantum waveguide at low temperature. The results show that the total thermal conductance decreases monotonically with temperature increasing. Moreover, we find that the behaviours of the thermal conductance versus temperature are different for different types of slits.展开更多
Using the non-equilibrium Green’s function techniques with interatomic potentials, we study the temperature dependence and the crossover of thermal conductance from the usual behavior proportional to the cross-sectio...Using the non-equilibrium Green’s function techniques with interatomic potentials, we study the temperature dependence and the crossover of thermal conductance from the usual behavior proportional to the cross-sectional area at room temperature to the universal quantized behavior at low temperature for carbon nanotubes, silicon nanowires, and diamond nanowires. We find that this crossover of thermal conductance occurs smoothly for the quasi-one-dimensional materials and its universal behavior is well reproduced by the simplified model characterized by two parameters.展开更多
Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In th...Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation（BTE）. The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.展开更多
Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Som...Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Some resonant transmission peaks and stop-frequency gaps can be observed,and the number and positions of these peaks and gaps are sensitive to the sizes of DQDs.With increasing the temperature,the thermal conductance undergoes a transition from the decrease to increase,and can be efficiently tuned by modulating the radius,length of DQDs as well as the interval between DQDs.In addition,at low temperatures,the enhancement of the thermal conductance can be also observed in this case.Some similarities and differences between the cylindrical and rectangular structures are identified.展开更多
b Département de Physique, Ecole Polythechnique Fédérale de Lausanne, EPFL, Lausanne, Switzerland c Department of Chemistry, Tsinghua University, Beijing 100084, China An excellent hole-transpor...b Département de Physique, Ecole Polythechnique Fédérale de Lausanne, EPFL, Lausanne, Switzerland c Department of Chemistry, Tsinghua University, Beijing 100084, China An excellent hole-transport material, 1,3-diphenyl-5-(9-phenanthryl)-2-pyrazoline (DPPhP) for OLEDs was studied. This compound not only offers high glass transition temperature (T g=96 ℃), good film forming ability, and high HOMO energy level, but also displays excellent hole-transport property. The electroluminescent device with a simple structure of ITO/DPPhP (60 nm)/AlQ (60 nm)/LiF (0.8 nm)/Al shows an external quantum efficiency as high as 1.6%.展开更多
基金supported by the Natural Science Foundation of Hunan Province of China (Grant No.09JJ5005)the National Natural Science Foundation of China (Grant Nos.10947134 and 11004017)
文摘Using the scattering-matrix method, we investigate the thermal conductance in a two-slit quantum waveguide at low temperature. The results show that the total thermal conductance decreases monotonically with temperature increasing. Moreover, we find that the behaviours of the thermal conductance versus temperature are different for different types of slits.
文摘Using the non-equilibrium Green’s function techniques with interatomic potentials, we study the temperature dependence and the crossover of thermal conductance from the usual behavior proportional to the cross-sectional area at room temperature to the universal quantized behavior at low temperature for carbon nanotubes, silicon nanowires, and diamond nanowires. We find that this crossover of thermal conductance occurs smoothly for the quasi-one-dimensional materials and its universal behavior is well reproduced by the simplified model characterized by two parameters.
基金supported by the National Natural Science Foundation of China(Grant Nos.11302189 and 11321202)the Doctoral Fund of Ministry of Education of China(Grant No.20130101120175)
文摘Gallium nitride（GaN）, the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation（BTE）. The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.
基金supported by the National Natural Science Foundation of China (Grant No.11204074)
文摘Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Some resonant transmission peaks and stop-frequency gaps can be observed,and the number and positions of these peaks and gaps are sensitive to the sizes of DQDs.With increasing the temperature,the thermal conductance undergoes a transition from the decrease to increase,and can be efficiently tuned by modulating the radius,length of DQDs as well as the interval between DQDs.In addition,at low temperatures,the enhancement of the thermal conductance can be also observed in this case.Some similarities and differences between the cylindrical and rectangular structures are identified.
文摘b Département de Physique, Ecole Polythechnique Fédérale de Lausanne, EPFL, Lausanne, Switzerland c Department of Chemistry, Tsinghua University, Beijing 100084, China An excellent hole-transport material, 1,3-diphenyl-5-(9-phenanthryl)-2-pyrazoline (DPPhP) for OLEDs was studied. This compound not only offers high glass transition temperature (T g=96 ℃), good film forming ability, and high HOMO energy level, but also displays excellent hole-transport property. The electroluminescent device with a simple structure of ITO/DPPhP (60 nm)/AlQ (60 nm)/LiF (0.8 nm)/Al shows an external quantum efficiency as high as 1.6%.
