An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase curr...An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.展开更多
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furt...Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.展开更多
The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is ...The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.展开更多
Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the furt...Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.展开更多
A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus...A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus（P） ion implantation was performed to induce InP-based multiple-quantum-well （MQW） laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee （PL） peak related to implanted dose ： 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.展开更多
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the...The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.展开更多
A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was ca...A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.展开更多
Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well in...Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.展开更多
Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(Q...Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied theoretically.By assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence peak.The infrared optical absorption spectrum also shows the expected redshift of the response wavelength.However,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated carriers.For high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum wells.In this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the QWIP.Special effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.展开更多
This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly ...This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.展开更多
对晶格与 In P匹配的 In Ga As P超晶格结构外延片 ,运用等离子增强化学气相沉积法镀Si O2 膜 ,随后用碘钨灯快速热退火 ,进行无杂质空位扩散 ( IFVD)技术的实验研究 ,测量光致发光谱后得到了最大 50 nm的峰值位置蓝移 ;表明在没有掺杂...对晶格与 In P匹配的 In Ga As P超晶格结构外延片 ,运用等离子增强化学气相沉积法镀Si O2 膜 ,随后用碘钨灯快速热退火 ,进行无杂质空位扩散 ( IFVD)技术的实验研究 ,测量光致发光谱后得到了最大 50 nm的峰值位置蓝移 ;表明在没有掺杂和没有应变的情况下 ,IFVD仍有较好的处理量子阱材料的能力 .对影响 IFVD工艺的重复性因素进行了探讨 .展开更多
报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787～ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别...报道了用离子注入方法和组合技术制备的 Al Ga As/Ga As单量子阱多波长发光集成芯片 ,利用量子阱界面混合原理在同一块 Ga As衬底片上获得了 2 0多个发光波长从 787～ 72 4nm的 Ga As量子阱发光单元 ,研究了不同剂量的 As和 H离子分别单独注入和迭加组合注入对量子阱发光峰位的影响 ,采用了组合技术和离子注入技术大大简化了制备工艺过程 ,这种发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义 .展开更多
文摘An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.
文摘Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.A maximum band gap wavelength blue shift as large as 200nm is realized.Furthermore,an FP laser blue shifted 21nm by QWI is fabricated with characteristics comparable with the as grown one.
文摘The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.
基金This work was supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.
基金Funded bythe National Natural Science Foundation of China(No.60276013)
文摘A method of QWI （ quantum well intermixing） realizing through plasma-enhanced chemical vapordepositiom （PECVD） SiO2 film following ion implantation was investigated. PECVD 200 mn SiO2 film after 160 keV phosphorus（P） ion implantation was performed to induce InP-based multiple-quantum-well （MQW） laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescenee （PL） peak related to implanted dose ： 1 × 10^11, 1 × 10^12, 1×10^13 ,3 × 10^13 , 7× 10^13 ion/ cm^2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.
基金supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.
文摘A quantum well intermixing（QW1） investigation on double quantum well（DQW） structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing （RTA） was carried out by means of photoluminescence（PL）. The ion implantation was performed at the energy of 120 keV with the dose ranging from 1 × 10^11cm^-2 to 1× 10^14cm^-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation（-1 × 10^11cm^-2） indicating that the implant vacancy distribution affects the QWl. When the ion dose is over - 1 × 10^12cm^-2, the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036,60706009,60777021 and 60702006)the National Basic Research Program of China (Grant Nos. 2006CB604901 and 2006CB604902)the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z419,2007AA03Z417 and 2009AA03Z442)
文摘Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.
文摘Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied theoretically.By assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence peak.The infrared optical absorption spectrum also shows the expected redshift of the response wavelength.However,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated carriers.For high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum wells.In this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the QWIP.Special effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.
基金supported by the State Key Development Program for Basic Research of China(No.2010CB327603)the National High Technology Research and Development Program of China(No.2011AA010304)
文摘This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
