In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by met...In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.展开更多
The generation of ultrashort optical pulse from passively mode-locked InGaAs/InGaAsP quantum well laser diodes is reported. The device consists of two segments: one is reversedly biased as a saturable absorber and the...The generation of ultrashort optical pulse from passively mode-locked InGaAs/InGaAsP quantum well laser diodes is reported. The device consists of two segments: one is reversedly biased as a saturable absorber and the other is current forward injected as a gain segment. The optical pulse with 7.8ps duration at 26 GHz repetition rate has been measured from the passively mode-locked laser with 1.625μm cavity length and 1.53μm emitting wavelength. Some simple descriptions of PMLD characteristics are also given.展开更多
基金supported by the National Natural Science Foundation of China (No.50472068)the Program for New Century Excellent Talents in University
文摘In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.
基金the High Technology Research and Development Programme of china
文摘The generation of ultrashort optical pulse from passively mode-locked InGaAs/InGaAsP quantum well laser diodes is reported. The device consists of two segments: one is reversedly biased as a saturable absorber and the other is current forward injected as a gain segment. The optical pulse with 7.8ps duration at 26 GHz repetition rate has been measured from the passively mode-locked laser with 1.625μm cavity length and 1.53μm emitting wavelength. Some simple descriptions of PMLD characteristics are also given.
