Designing a Full Adder Circuit Based on Quasi-Floating Gate

Since in designing the full adder circuits, full adders have been generally taken into account, so as in this paper it has been attempted to represent a full adder cell with a significant efficiency of power, speed and leakage current levels. For this objective, a comparison between five full adder circuits has been provided. Applying floating gate technology and refresh circuits in the full adder cell lead to the reduction of leakage current on the gate node. The simulations were accomplished in this paper, through HSPICE software and 65 nm CMOS technology. The simulation results indicate the considerable efficiency of power consumption, speed and leakage current in the full adder cell rather than other cells.

引入上下文信息和Attention Gate的GUS-YOLO遥感目标检测算法

目前基于通用YOLO系列的遥感目标检测算法存在并未充分利用图像的全局上下文信息,在特征融合金字塔部分并未充分考虑缩小融合特征之间的语义鸿沟、抑制冗余信息干扰的缺点。在结合YOLO算法优点的基础上提出GUS-YOLO算法,其拥有一个能够充分利用全局上下文信息的骨干网络Global Backbone。除此之外,该算法在融合特征金字塔自顶向下的结构中引入Attention Gate模块,可以突出必要的特征信息,抑制冗余信息。另外,为Attention Gate模块设计了最佳的网络结构,提出了网络的特征融合结构U-Net。最后,为克服ReLU函数可能导致模型梯度不再更新的问题,该算法将Attention Gate模块的激活函数升级为可学习的SMU激活函数,提高模型鲁棒性。在NWPU VHR-10遥感数据集上,该算法相较于YOLOV7算法取得宽松指标mAP^(0.50)1.64个百分点和严格指标mAP^(0.75)9.39个百分点的性能提升。相较于目前主流的七种检测算法,该算法取得较好的检测性能。

Gates joint locally connected network for accurate and robust reconstruction in optical molecular tomography

Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.

Remote entangling gate between a quantum dot spin and a transmon qubit mediated by microwave photons

Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.

A gated recurrent unit model to predict Poisson’s ratio using deep learning

Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.

Aerial target threat assessment based on gated recurrent unit and self-attention mechanism

Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.

预测轴承寿命的gate递归单元特征融合域自适应模型

采用现有的数据驱动模型对不同工况下的轴承剩余使用寿命(RUL)进行预测时,精度会大幅下降。针对这一问题,提出了一种基于门控递归单元特征融合领域自适应(GFFDA)模型的轴承RUL预测方法。首先,采用信号分析方法对轴承振动信号进行了特征提取,并采用特征评价的方法选择出了5个最优特征,在最优特征的基础上,采用粒子群算法优化后的支持向量机的方法对轴承的健康阶段进行了划分;然后,选择目标域和源域退化阶段的最优特征子集作为GFFDA模型的输入,采用源域数据对特征提取器和寿命预测模块进行了预训练;最后,更新了目标特征提取器和寿命预测模块,对目标域的RUL进行了预测;并使用西安交通大学的轴承数据集对该GFFDA模型的有效性进行了验证。研究结果表明:相比于现有的数据驱动模型,GFFDA模型具有更好的跨工况分析能力和更出色的信息提取能力;同时,在对变工况的轴承寿命进行预测时,采用GFFDA模型具有更好的性能。

Dual Gate液晶显示屏栅极制程断路缺陷的分析与改善

文章探究了光刻工序的水汽和ITO刻蚀工序的药液结晶对DualGate产品栅极制程的断路影响,通过DOE试验得到影响因子的最佳改善条件,使55寸DualGate产品栅极制程的断路缺陷发生率整体降低36%,为公司带来80.2万元的月度收益,能够对其他高端产品断路缺陷的改善思路、新工艺设备的设计改进,提供参考。

基于Leaky Noisy-or Gate和贝叶斯网络的光伏发电项目施工风险评估方法

针对复杂多变的光伏发电项目施工风险评估问题,利用Leaky Noisy-or Gate模型整合历史经验和专家知识来确定贝叶斯网络参数并建立光伏施工风险的贝叶斯网络模型,同时采用Netica仿真分析,对施工风险进行有效预测并诊断识别出关键性风险和敏感性风险,以便管理者精准施策、管控风险。为验证该方法的有效性,以Z项目为例进行建模仿真。结果表明,其施工风险等级为中等,与实际相符。

All-optical controlled-NOT logic gate achieving directional asymmetric transmission based on metasurface doublet

Optical logic gates play important roles in all-optical logic circuits,which lie at the heart of the next-generation optical computing technology.However,the intrinsic contradiction between compactness and robustness hinders the development in this field.Here,we propose a simple design principle that can possess multiple-input-output states according to the incident circular polarization and direction based on the metasurface doublet,which enables controlled-NOT logic gates in infrared region.Therefore,the directional asymmetric electromagnetic transmission can be achieved.As a proof of concept,a spin-dependent Janus metasurface is designed and experimentally verified that four distinct images corresponding to four input states can be captured in the far-field.In addition,since the design method is derived from geometric optics,it can be easily applied to other spectra.We believe that the proposed metasurface doublet may empower many potential applications in chiral imaging,chiroptical spectroscopy and optical computing.

Radar Quantitative Precipitation Estimation Based on the Gated Recurrent Unit Neural Network and Echo-Top Data

The Gated Recurrent Unit(GRU) neural network has great potential in estimating and predicting a variable. In addition to radar reflectivity(Z), radar echo-top height(ET) is also a good indicator of rainfall rate(R). In this study, we propose a new method, GRU_Z-ET, by introducing Z and ET as two independent variables into the GRU neural network to conduct the quantitative single-polarization radar precipitation estimation. The performance of GRU_Z-ET is compared with that of the other three methods in three heavy rainfall cases in China during 2018, namely, the traditional Z-R relationship(Z=300R1.4), the optimal Z-R relationship(Z=79R1.68) and the GRU neural network with only Z as the independent input variable(GRU_Z). The results indicate that the GRU_Z-ET performs the best, while the traditional Z-R relationship performs the worst. The performances of the rest two methods are similar.To further evaluate the performance of the GRU_Z-ET, 200 rainfall events with 21882 total samples during May–July of 2018 are used for statistical analysis. Results demonstrate that the spatial correlation coefficients, threat scores and probability of detection between the observed and estimated precipitation are the largest for the GRU_Z-ET and the smallest for the traditional Z-R relationship, and the root mean square error is just the opposite. In addition, these statistics of GRU_Z are similar to those of optimal Z-R relationship. Thus, it can be concluded that the performance of the GRU_ZET is the best in the four methods for the quantitative precipitation estimation.

基于Golden Gate高效构建psiCHECK双荧光素酶报告基因的方法及应用

目的 基于Golden Gate技术构建psiCHECK-CcdB重组双荧光素酶报告载体,并探讨其能否用于RNA干扰(RNA interference, RNAi)药物筛选。方法 通过聚合酶链反应(polymerase chain reaction,PCR)扩增CcdB致死基因、氯霉素基因与Golden Gate组装所需的BsmBI酶切位点,将其克隆至psiCHECK-2载体,构建出重组载体psiCHECK-CcdB。利用2种大肠杆菌DB3.1与DH5α对该载体的致死效率进行检测,选用1 387 bp大小的外源片段克隆至psiCHECK-CcdB载体,检测其连接效率,并验证重组载体能否发挥双荧光素酶报告系统功能,监测目的基因的表达变化。结果 菌落PCR以及测序鉴定psiCHECK-CcdB重组质粒构建成功,该质粒可有效致死无法耐受CcdB毒素的大肠杆菌DH5α菌株,在DB3.1菌株中正常生长。采用Golden Gate的方法可将外源片段简单快速克隆至psiCHECKCcdB载体中,连接效率显著提高且低背景克隆。通过测定双荧光素酶表达强度,证实了小干扰RNA(small interfering RNA,siRNA)靶向性结合目的基因可显著下调荧光素酶的表达,成功发挥双荧光素酶报告基因功能。结论 本研究成功构建了psiCHECK-CcdB重组双荧光素酶报告载体,应用Golden Gate组装技术,简化了实验操作流程,降低了实验成本,具备较高的阳性克隆率与多片段一次性组装的潜力,在RNAi药物筛选领域应用前景广阔。

An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics

A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.

Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate

The reverse gate leakage mechanism of W-gate and Ti N-gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with N2plasma surface treatment is investigated using current–voltage(I–V)and capacitance–voltage(C–V)characteristics and theoretical calculation analysis.It is found that the main reverse gate leakage mechanism of both devices is the trapassisted tunneling(TAT)mechanism in the entire reverse bias region(-30 V to 0 V).It is also found that the reverse gate leakage current of the W-gate Al GaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage.Moreover,the activation energies of the extracted W-gate and Ti N-gate AlGaN/GaN HEMTs are 0.0551 e V–0.127 eV and0.112 eV–0.201 eV,respectively.

Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate–drain underlap

Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.

Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.

Research on the Chemical Hazard Risk of Toys Exported to EU from China Based on the Analysis of the EU “Safety Gate” Alerts Cases

Based on the analysis of the 2544 alert cases from “Safety Gate” (the EU rapid alert system for dangerous non-food products) of toys exported to the EU market from China in the past five years (2017-2021), this study focuses on the chemical hazards as the key research object, investigates and identifies categories of toy products and related chemicals with high notification rate. The research results have shown that the most seriously and frequently alerted toy products due to chemical hazards from China exported to the EU are plastic dolls, slimes, rubber toy balloons, toy guns and squeezable toys, while the high failure rate of chemicals in sequence are phthalates, boron element, N-Nitrosamines and N-Nitrosatable substances, and bis(2-(dimethylamino)ethyl) ether. This study aims to improve the efficiency of inspection and test of export toys, and provide decision-making references for Chinese toy export enterprises to respond to EU technical trade measures.

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

Thermal spin molecular logic gates modulated by an electric field

Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.