We report on the novel heterometallic quaternary selenide EuCeCuSe3,the fabrication of which has been a challenge until this work.The structure of the reported selenide was elucidated from the powder X-ray diffraction...We report on the novel heterometallic quaternary selenide EuCeCuSe3,the fabrication of which has been a challenge until this work.The structure of the reported selenide was elucidated from the powder X-ray diffraction data,which revealed the formation of EuCeCuSe3with excellent yield(96.7%)accompanied with a minor fraction of CeSe2(3.3%),and was best solved in orthorhombic space group Pnma with the BaLaCuS3structural type.Thus,the crystal structure of the title compound completes the row of the heterometallic quaternary selenides EuRECuSe3(RE=La,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu,Y),of which the cerium-based derivative exclusively belongs to the BaLaCuS3structural type.The distortion of the CuSe4polyhedron was compared for the whole series of EuRECuSe3compounds using theτ4-descriptor for four coordinated ions,which revealed the highest degree of distortion for the Ce3+-containing selenide,followed by the La3+-based derivative.Furthermore,the crystallographic and geometrical parameters of the reported selenide were discussed in comparison to the Ce3+-based sulfides SrCeCuS3and EuCeCuS3.Ab initio calculations of the crystal structure,a phonon spectrum and elastic constants for the crystal of EuCeCuSe3were also performed.The types and wavenumbers of fundame ntal modes were determined and the involvement of ions participating in the phonon modes was assessed.The experimental IR spectrum of the reported selenide was interpreted and found to be in agreement with the calculated spectrum.The experimental direct band gap of EuCeCuSe3was measured to be 1.36 eV that is consistent with the concept of its origin due to interband transitions between orbitals emerging mainly from 4f(valence band)and 5d(conduction band)levels of the Eu2+cation.The dependence of the Young’s modulus on the direction demonstrates the anisotropy of the elastic properties,while the Vickers hardness for EuCeCuSe3was calculated to be 5.2 GPa.Finally,the title compound is paramagnetic above 4 K.展开更多
A new quaternary selenide Ba4Sn3GeSe9 was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis,UV-vis spectrum,and single-crystal X-ray diffraction.The title compou...A new quaternary selenide Ba4Sn3GeSe9 was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis,UV-vis spectrum,and single-crystal X-ray diffraction.The title compound crystallizes in the orthorhombic space group Pnma with a=12.463(3),b=9.308(2)and c=17.892(5)Å.Ba_(4)Sn_(3)GeSe_(9)can be characterized by a zero-dimensional compound composed by special[GeSnSe_(5)]4-units,[Sn_(2)Se_(4)]^(4-)units and the adjacent cations Ba^(2+)ions.The[GeSnSe_(5)]^(4-)unit is composed of a SnSe3 trigonal pyramid formed by divalent Sn2+and edge-sharing with a GeSe4 tetrahedron,and the[Sn_(2)Se_(4)]^(4-) unit is composed of two SnSe3 trigonal pyramids.Ba_(4)Sn_(3)GeSe_(9)is an indirect semiconductor with a band gap of 1.21 eV.展开更多
基金Project supported by the Tyumen Oblast Government,as part of the West-Siberian Interregional Science and Education Center’s(89-DON(3))The Ministry of Science and Higher Education of the Russian Federation project(No.FEUZ-2023-0017)。
文摘We report on the novel heterometallic quaternary selenide EuCeCuSe3,the fabrication of which has been a challenge until this work.The structure of the reported selenide was elucidated from the powder X-ray diffraction data,which revealed the formation of EuCeCuSe3with excellent yield(96.7%)accompanied with a minor fraction of CeSe2(3.3%),and was best solved in orthorhombic space group Pnma with the BaLaCuS3structural type.Thus,the crystal structure of the title compound completes the row of the heterometallic quaternary selenides EuRECuSe3(RE=La,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu,Y),of which the cerium-based derivative exclusively belongs to the BaLaCuS3structural type.The distortion of the CuSe4polyhedron was compared for the whole series of EuRECuSe3compounds using theτ4-descriptor for four coordinated ions,which revealed the highest degree of distortion for the Ce3+-containing selenide,followed by the La3+-based derivative.Furthermore,the crystallographic and geometrical parameters of the reported selenide were discussed in comparison to the Ce3+-based sulfides SrCeCuS3and EuCeCuS3.Ab initio calculations of the crystal structure,a phonon spectrum and elastic constants for the crystal of EuCeCuSe3were also performed.The types and wavenumbers of fundame ntal modes were determined and the involvement of ions participating in the phonon modes was assessed.The experimental IR spectrum of the reported selenide was interpreted and found to be in agreement with the calculated spectrum.The experimental direct band gap of EuCeCuSe3was measured to be 1.36 eV that is consistent with the concept of its origin due to interband transitions between orbitals emerging mainly from 4f(valence band)and 5d(conduction band)levels of the Eu2+cation.The dependence of the Young’s modulus on the direction demonstrates the anisotropy of the elastic properties,while the Vickers hardness for EuCeCuSe3was calculated to be 5.2 GPa.Finally,the title compound is paramagnetic above 4 K.
基金the National Natural Science Foundation of China(No.21703248)the National Key Research and Development Program of China(No.2017YFA0700103,2018YFA0704502)the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB20000000)。
文摘A new quaternary selenide Ba4Sn3GeSe9 was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis,UV-vis spectrum,and single-crystal X-ray diffraction.The title compound crystallizes in the orthorhombic space group Pnma with a=12.463(3),b=9.308(2)and c=17.892(5)Å.Ba_(4)Sn_(3)GeSe_(9)can be characterized by a zero-dimensional compound composed by special[GeSnSe_(5)]4-units,[Sn_(2)Se_(4)]^(4-)units and the adjacent cations Ba^(2+)ions.The[GeSnSe_(5)]^(4-)unit is composed of a SnSe3 trigonal pyramid formed by divalent Sn2+and edge-sharing with a GeSe4 tetrahedron,and the[Sn_(2)Se_(4)]^(4-) unit is composed of two SnSe3 trigonal pyramids.Ba_(4)Sn_(3)GeSe_(9)is an indirect semiconductor with a band gap of 1.21 eV.
