Aragonite from Mulanshan Glaucophane Schist: Implications for Regional Evolution of Southwestern Dabie Mountains, Central China

The aragonite, an index mineral of glaucophane schist facies, has not been confirmed in the Dabie Mountains high pressure and ultrahigh pressure metamorphic belts. The Mulanshan glaucophane schist in Huangpi County, Hubei Province is located in the southwestern Dabie Mountains, Central China. The micron sized intergranular aragonite is confirmed with optical microscope (OM) and electron probe microanalysis (EPMA) in the glaucophane schist. The submicrometer sized ellipse aragonite inclusion is observed by using bright field image (BFI), X ray energy damage spectrograph (EDS) and selected area electron diffraction (SAED) with transmission electron microscope in the quartz lens of glaucophane albite epidote chlorite schist from Mulanshan. The presence of aragonite indicates not only the average geothermal gradient of the Mulanshan glaucophane schist less than 10 ℃/km, which is very close to that of eclogite in the Dabie Mountains metamorphic belts, but also the relatively higher concentration of CO2 during the metamorphic process. In addition, the glaucophane schist free of such index minerals as lawsonite, prehnite and pumpellyite, has been attributed to the effect of CO2 on the stability of calcium aluminum silicate minerals during the low grade metamorphism. EDS and SAED analysis results show that the host of aragonite inclusion is amorphous SiO2. The occurrence of amorphous SiO2 indicates a quick cooling process during the exhumation of the Mulanshan glaucophane schist. These results suggest that the rapid exhumation mechanism of the glaucophane schist, the same as that of eclogite in the Dabie Mountains metamorphic belts, occurred in the geodynamic context of subduction obduction.

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage（V（ex）） when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V（ex） is too low（0.2 V-0.8 V） or too high（3 V-4.2 V）,the timing jitter is increased with the V（ex）,particularly at high V（ex）.While at middle V（ex）（1 V-2.8 V）,the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V（ex） and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of -2.08×10 -5 per gate at the V（ex） of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power（NEP） and the afterpulse probability（P（ap））.It is found that both NEP and P（ap） increase quickly when the V（ex） is above 2.8 V.At -2.8-V V（ex）,the NEP and P（ap） are -2.06×10-（16）W/Hz-（1/2） and 7.11%,respectively.Therefore,the detector should be operated with V（ex） of 2.8 V to exploit the fast time response,low NEP and low P（ap）.