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Atypical osteochondroma of the lumbar spine associated with suprasellar pineal germinoma:A case report 被引量:1
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作者 Patrik Suwak Scott A Barnett +1 位作者 Bryant M Song Michael J Heffernan 《World Journal of Orthopedics》 2021年第9期720-726,共7页
BACKGROUND Osteochondromas are the most common benign bone tumor,accounting for 36%of benign bone tumors.Often found within the appendicular skeleton,osteochondromas of the spine are rare,comprising 4%to 7%of primary ... BACKGROUND Osteochondromas are the most common benign bone tumor,accounting for 36%of benign bone tumors.Often found within the appendicular skeleton,osteochondromas of the spine are rare,comprising 4%to 7%of primary benign spinal tumors.CASE SUMMARY We report a case of a solitary lumbar osteochondroma in an 18-year-old male with a history of a suprasellar pineal germinoma treated with combined chemotherapy and radiation.He underwent mass excision and partial laminectomy with the ultrasonic bone scalpel(Misonix,Farmingdale,NY,United States)at the L5 Level without the use of adjuvants.The patient returned to work and full activities without back pain at 3 mo postoperatively.CONCLUSION Osteochondromas are common tumors of the appendicular skeleton but rarely occur within the spine.This case discussion supplements current osteochondroma literature by describing an unusual presentation of this tumor. 展开更多
关键词 Spine osteochondroma Lumbar osteochondroma LAMINECTOMY radiationinduced osteochondroma Spine surgery Case report
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Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
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作者 张梦映 胡志远 +2 位作者 毕大炜 戴丽华 张正选 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期619-624,共6页
Total ionizing dose responses of different transistor geometries after being irradiated by ^(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative thr... Total ionizing dose responses of different transistor geometries after being irradiated by ^(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail. 展开更多
关键词 partiallydepleted silicon-on-insulator(PD SOI) totalionizingdose(TID) radiationinduced narrow channel effect(RINCE) drain induced barrier lowering(DIBL) effect
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