Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

RF MEMS switches based on thermal actuator

A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.

Design of synthetic aperture radar low-intercept radio frequency stealth

Not confined to a certain point,such as waveform,this paper systematically studies the low-intercept radio frequency(RF)stealth design of synthetic aperture radar(SAR)from the system level.The study is carried out from two levels.In the first level,the maximum low-intercept range equation of the conventional SAR system is deduced firstly,and then the maximum low-intercept range equation of the multiple-input multiple-output SAR system is deduced.In the second level,the waveform design and imaging method of the low-intercept RF SAR system are given and verified by simulation.Finally,the main technical characteristics of the lowintercept RF stealth SAR system are given to guide the design of low-intercept RF stealth SAR system.

A HIGH SENSITIVITY AND WIDE DYNAMIC RANGE ZERO-IF RF RECEIVER FOR COGNITIVE RADIO APPLICATION

This paper presents an RF receiver of zero-Intermediate Frequency(IF) architecture for Cognitive Radio(CR) communication systems.Zero-IF architecture reduce the image reject filter and IF filter,so it is excellent in low cost,compact volume,and low power dissipation.The receiver employs three digital attenuator and a high gain,high linearity low noise amplifier to achieve wide dynamic range of 70 dB and high receiving sensitivity of-81 dBm.A fully balanced I/Q demodulator and a differential Local Oscillator(LO) chips are used to minimize the negative effects caused by second-order distortion and LO leakage.In order to select an 8 MHz-channel from 14 continuous ones located in UHF band(694-806 MHz) accurately,approach of channel selectivity circuits is proposed.The RF receiver has been designed,fabricated,and test.The measured result shows that the noise figure is 3.4 dB,and the error vector magnitude is 7.5% when the input power is-81 dBm.

Sensitivity analysis of pull-in voltage for RF MEMS switch based on modified couple stress theory

An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.

A compact transmit/receive switch for 2.4 GHz reader-less active RFID tag transceiver

Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less RFID tag. The switch utilizes only the transistor width and length(W/L) optimization, proper gate bias resistor and resistive body floating technique and therefore,exhibits 1 d B insertion loss, 31.5 d B isolation and 29.2 d Bm 1-d B compression point(P1d B). Moreover, the switch dissipates only786.7 n W power for 1.8/0 V control voltages and is capable of switching in 794 fs. Above all, as there is no inductor or capacitor used in the circuit, the size of the switch is 0.00208 mm2 only. This switch will be appropriate for reader-less RFID tag transceiver front-end as well as other wireless transceivers operated at 2.4 GHz band.

Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure

A one-dimensional（1D） fluid model on capacitively coupled radio frequency（RF） argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on electron heating. The model is solved numerically by a finite difference method. The numerical results show that the discharge process may be divided into three stages： the growing rapidly stage, the growing slowly stage, and the steady stage. In the steady stage,the maximal electron density increases as the driving frequency increases. The results show that the discharge region has three parts： the powered electrode sheath region, the bulk plasma region and the grounded electrode sheath region. In the growing rapidly stage（at 18 μs）, the results of the cycle-averaged electric field, electron temperature, electron density, and electric potentials for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are compared, respectively. Furthermore,the results of cycle-averaged electron pressure cooling, electron ohmic heating, electron heating, and electron energy loss for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are discussed, respectively. It is also found that the effect of the cycle-averaged electron pressure cooling on the electrons is to ＂cool＂ the electrons; the effect of the electron ohmic heating on the electrons is always to ＂heat＂ the electrons; the effect of the cycle-averaged electron ohmic heating on the electrons is stronger than the effect of the cycle-averaged electron pressure cooling on the electrons in the discharge region except in the regions near the electrodes. Therefore, the effect of the cycle-averaged electron heating on the electrons is to ＂heat＂ the electrons in the discharge region except in the regions near the electrodes. However, in the regions near the electrodes, the effect of the cycle-averaged electron heating on the electron is to ＂cool＂ the electrons. Finally, the space distributions of the electron pressure cooling the electron ohmic heating and the electron heating at 1/4 T, 2/4 T, 3/4 T, and 4/4 T in one RF-cycle are presented and compared.

Depressed Acne Scars—Effective, Minimal Downtime Treatment with a Novel Smooth Motion Non-Insulated Microneedle Radiofrequency Technology

Background: The microneedle fractional RF handpiece used in our study (Intensif Handpiece, EndyMed Medical, Caesarea, Israel) is a novel handpiece that uses a tip with 25 non-insulated, gold plated microneedle electrodes. The needles are inserted into the skin by a specially designed electronically controlled, smooth motion motor minimizing patient discomfort. RF emission delivered over the whole dermal portion of the needle allows effective coagulation resulting in minimal or no bleeding, together with bulk volumetric heating. Study Design/Materials and Methods: The study included 20 patients, treated for depressed acne scars using the IntensifTM?Microneedles handpiece (EndyMed PRO Platform System, EndyMed Medical, Caesarea, Israel). The degree of clinical improvement was assessed by the global aesthetic improvement scale (GAIS) and subjects satisfaction by post treatment questionnaires. Results: The number of treatments per patient varied between 1 and 6 (average 3.3 treatments per patient). Eleven patients (55%) reported none to minimal pain, six (30%) moderate discomfort and only three (15%) reported significant pain. Objective evaluation of the improvement by a board certified dermatologist showed improvement in 95% of patients. 25% showed excellent improvement, 50% experienced good improvement, and the 20% showed minimal improvement. One patient showed no improvement. Conclusions: The presented results show that the tested electronically controlled motorized insertion, non-insulated microneedle treatment technology provides a minimal discomfort, minimal downtime, effective and safe treatment for depressed acne scars.

Rydberg electromagnetically induced transparency and Autler–Townes splitting in a weak radio-frequency electric field

We utilize an electromagnetically induced transparency(EIT) of a three-level cascade system involving Rydberg state in a room-temperature cell, formed with a cesium 6 S_(1/2)–6 P_(3/2)–66 S_(1/2) scheme, to investigate the Autler–Townes(AT)splitting resulting from a 15.21-GHz radio-frequency(RF) field that couples the |66 S_(1/2) → |65 P_(1/2) Rydberg transition.The radio-frequency electric field induced AT splitting, γAT, is defined as the peak-to-peak distance of an EIT-AT spectrum.The dependence of AT splitting γAT on the probe and coupling Rabi frequency, ?_p and ?_c, is investigated. It is found that the EIT-AT splitting strongly depends on the EIT linewidth that is related to the probe and coupling Rabi frequency in a weak RF-field regime. Using a narrow linewidth EIT spectrum would decrease the uncertainty of the RF field measurements.This work provides new experimental evidence for the theoretical framework in [J. Appl. Phys. 121, 233106(2017)].

OWC/RF混合通信系统研究进展

无线光/射频混合通信系统克服了单一通信系统的局限性,在最大发挥无线光通信优势的同时弥补了射频通信的不足,显著提高了链路的可用性和可靠性,为未来高速大容量的信息传输提供了独特的解决方案。对近年来无线光/射频混合通信系统的研究进展进行了综述,首先介绍了不同混合通信系统模型的工作原理与应用,然后讨论了混合通信系统所面临的挑战和解决方法,最后展望了无线光/射频混合通信系统的未来发展趋势,旨在为无线光/射频混合通信系统的进一步研究和发展奠定基础。

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

A novel radio frequency coil for veterinary magnetic resonance imaging system

In this article, a novel designed radio frequency （RF） coil is designed and built for the imaging of puppies in a V-shape permanent magnetic resonance imaging （MRI） system. Two sets of Helmholtz coil pairs with a V-shape structure are used to improve the holding of an animal in the coil. The homogeneity and the sensitivity of the RF field in the coil are analysed by theoretical calculation. The size and the shape of the new coil are optimized and validated by simulation through using the finite element method （FEM）. Good magnetic resonance （MR） images are achieved on a shepherd dog.

Comparison of pulse-modulated and continuous operation modes of a radio-frequency inductive ion source

The paper describes an experimental study of the characteristics of a pulse-modulated radiofrequency(RF)discharge sustained at low pressures,typical of the operating modes of RF gridded ion sources.The motivation for the study is the question of whether the RF pulsemodulated mode can increase the efficiency of the ion source.The ion current values extracted from an RF inductive ion source operating in continuous and pulse-modulated modes were compared.The experimental data were also compared with the parameter calculations based on a0D numerical model of the discharge.The measurements showed that the pulse-modulated operation mode of the RF ion source had a noticeable advantage when the power of the RF generator was 140 W or lower.However,as the generator power increased,the advantage was lost because the pulse-modulated operation mode,having a higher RF power instant value,entered the region of existence sooner than the continuous mode,where the ion production cost begins to grow with RF power.

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Ignition dynamics of radio frequency discharge in atmospheric pressure cascade glow discharge

A cascade glow discharge in atmospheric helium was excited by a microsecond voltage pulse and a pulse-modulated radio frequency(RF) voltage, in which the discharge ignition dynamics of the RF discharge burst was investigated experimentally. The spatio-temporal evolution of the discharge, the ignition time and optical emission intensities of plasma species of the RF discharge burst were investigated under different time intervals between the pulsed voltage and RF voltage in the experiment. The results show that by increasing the time interval between the pulsed discharge and RF discharge burst from 5 μs to 20 μs, the ignition time of the RF discharge burst is increased from 1.6 μs to 2.0 μs, and the discharge spatial profile of RF discharge in the ignition phase changes from a double-hump shape to a bell-shape. The light emission intensity at 706 nm and 777 nm at different time intervals indicates that the RF discharge burst ignition of the depends on the number of residual plasma species generated in the pulsed discharges.

ANALYSIS AND MEASUREMENT OF LARGE DYNAMIC RANGE RF SWITCH INTER-MODULATION

Radio Frequency (RF) switch circuit is the basic part of microwave devices and systems. The non-linearity distortion figure is necessary in the field of large dynamic range of signal. This letter analyzes the basic switch circuit and its inter-modulation, and studies in detail the measurement methods and systems of RF switch intercept point. It has provided cascaded simulation testing methods, which can accurately measure the PF switch, of which the second or third order intercept point value is above 75dB and 60dB, respectively. As the testing results are consistent with the theoretical analyses, it proves that the validity of the method satisfies the requirements of large scaled linearity measurement in engineering.

Radio Frequency Fingerprint-Based Satellite TT&C Ground Station Identification Method

This study presents a radio frequency(RF)fingerprint identification method combining a convolutional neural network(CNN)and gated recurrent unit(GRU)network to identify measurement and control signals.The proposed algorithm(CNN-GRU)uses a convolutional layer to extract the IQ-related learning timing features.A GRU network extracts timing features at a deeper level before outputting the final identification results.The number of parameters and the algorithm’s complexity are reduced by optimizing the convolutional layer structure and replacing multiple fully-connected layers with gated cyclic units.Simulation experiments show that the algorithm achieves an average identification accuracy of 84.74% at a -10 dB to 20 dB signal-to-noise ratio(SNR)with fewer parameters and less computation than a network model with the same identification rate in a software radio dataset containing multiple USRP X310s from the same manufacturer,with fewer parameters and less computation than a network model with the same identification rate.The algorithm is used to identify measurement and control signals and ensure the security of the measurement and control link with theoretical and engineering applications.

Designing Wireless Charger Circuit for Hearing Aids Using Radio Frequency Waves

In this paper, an attempt has been made to produce a recipient system of wireless charge for a simple hearing aid so that electrical signal would be generated through detecting and receiving radio frequency waves (RF). The purpose of this design is to receive wireless charge for hearing aids and basically for any electronic device which is not required to a high energy for being setup. In this study, it has been demonstrated that as the amount of radio receiving energy increases, distance of receiver from antenna should be decreased;otherwise, either maximum amount of the receiving energy, or signal power density of the transmitter should be increased. Since it is impossible to be performed, it is decided to set up an energy receiving system constructed by rectenna and charge Circuit and to adjust their parameters to provide energy requirements for a device with low-power consumption. In this paper, different components of an energy receiving system from radio frequency band have been mentioned and a diagram block has been suggested. Subsequently, input impedance of designed antenna has been adjusted by provided relations. This impedance should be adjusted with the total impedance of regarded hearing aid Circuit by which the highest amount of received signal power is transferred to the battery of hearing aids. Received signal is converted to a dc voltage by rectifier diode. Finally, by applying a voltage regulator which has been designed using a common-collector amplifier not only the output voltage is kept constant, but the power is also strengthened. The battery of the hearing aids will be charged using the obtained power and voltage.

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.