A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact ...A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.展开更多
An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam an...An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.展开更多
This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine...This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q-factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 μm has a peak Q-factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q-factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05 -3.00 GHz.展开更多
文摘A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.
基金supported by the National Natural Science Foundation of China(Nos.51505089 and61204116)the Opening Project of the Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Nos.ZHD201207 and 9140C030605140C03015)the Pearl River S&T Nova Program of Guangzhou(No.2014J2200086)
文摘An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.
文摘This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q-factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 μm has a peak Q-factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q-factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05 -3.00 GHz.
