A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact ...A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.展开更多
An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam an...An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.展开更多
文中介绍了一种新型的RF MEMS可调帯阻滤波器。该滤波器是通过在共面波导地结构上刻蚀出缺陷地结构,形成基本谐振单元;再通过加入RF MEMS开关,实现可调滤波器。分析了滤波器的结构参数和RF MEMS开关与竖向槽的关系。可调帯阻滤波器制作...文中介绍了一种新型的RF MEMS可调帯阻滤波器。该滤波器是通过在共面波导地结构上刻蚀出缺陷地结构,形成基本谐振单元;再通过加入RF MEMS开关,实现可调滤波器。分析了滤波器的结构参数和RF MEMS开关与竖向槽的关系。可调帯阻滤波器制作在高阻硅（εr=11.9）基板上,厚度为460μm;表面金属材料为铝,厚度为2μm。该滤波器实现了14-18 GHz可调,可调范围约为30%;中心频点处对应的回波损耗大于-2 d B,插入损耗小于-35 d B;10 d B带宽大于8.6 GHz。展开更多
文摘A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.
基金supported by the National Natural Science Foundation of China(Nos.51505089 and61204116)the Opening Project of the Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Nos.ZHD201207 and 9140C030605140C03015)the Pearl River S&T Nova Program of Guangzhou(No.2014J2200086)
文摘An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.
文摘文中介绍了一种新型的RF MEMS可调帯阻滤波器。该滤波器是通过在共面波导地结构上刻蚀出缺陷地结构,形成基本谐振单元;再通过加入RF MEMS开关,实现可调滤波器。分析了滤波器的结构参数和RF MEMS开关与竖向槽的关系。可调帯阻滤波器制作在高阻硅（εr=11.9）基板上,厚度为460μm;表面金属材料为铝,厚度为2μm。该滤波器实现了14-18 GHz可调,可调范围约为30%;中心频点处对应的回波损耗大于-2 d B,插入损耗小于-35 d B;10 d B带宽大于8.6 GHz。
