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A new insight into rapid oxidation of alloy 925 contaminated by oxide powder
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作者 He Jiang Jian-Xin Dong +1 位作者 Mai-Cang Zhang Jiang-Yang Li 《Rare Metals》 CSCD 2021年第7期1872-1880,共9页
Rapid oxidation takes place both in the laboratory and in industrial conditions when alloy 925 is contaminated by oxide powder,and the oxidation rate is much higher than normal.Herein,the rapid oxidation behavior and ... Rapid oxidation takes place both in the laboratory and in industrial conditions when alloy 925 is contaminated by oxide powder,and the oxidation rate is much higher than normal.Herein,the rapid oxidation behavior and mechanism of alloy 925 were investigated by a series of comparison tests at 1160℃.It is found that the oxide powder produced during the oxidation process is mainly composed of NiCr_(2)O_(4)spinel,accompanied by NiO and NiMoO_(4).The oxide powder plays a triggering role in the rapid oxidation of alloy 925,as NiO has a strong affinity with O.A composition adjustment experiment of alloy 925 shows that rapid oxidation is the synergetic effect of Mo and Cu in the alloy.Mo and Cu easily combine to form low melting point eutectics.The formation and volatilization of MoO_(3)oxide can destroy the completeness of the protective oxide layer.The MoO_(3)flux can dissolve protective Cr_(2)O_(3)and prevent the repair of the oxide layer and also promote the formation of nonprotective and easy-spall NiCr_(2)O_(4)spinel.The synergetic effect of Cu and Mo in accelerating oxidation should be considered in any nickel-based alloy with a high content of Cu and Mo. 展开更多
关键词 rapid oxidation Synergetic effect Nickelbased superalloy
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Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer 被引量:2
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作者 Yuejiao He, Huaixiang Li, Chenghua Guo, Guirong Liu, Yansheng Chen, Shuzhen Duan (Institute of Semiconductors, Shandong Normal University, Jinan 250014, China Metallurgy School, University of Science and Technology Beijing, Beijing 100083, China) 《Rare Metals》 SCIE EI CAS CSCD 2001年第1期38-42,57,共6页
The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by ... The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples. 展开更多
关键词 porous silicon PHOTOLUMINESCENCE surface modification rapid thermal oxidation
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