Layered Ag-graphene films synthesized by Gamma ray irradiation for stable lithium metal ano des in carb on ate-based electrolytes

Lithium metal batteries are considered as high energy density battery systems with very promising prospects and have bee n widely studied.However,The uncon trollable plating/strippi ng behavior,infinite volume change and den drites formation of lithium metal anode restrict the applicati on.The unc on trolled n ucleati on of lithium caused by the non uniform multi-physical field distributions,can lead to the undesirable lithium deposition.Herein,a graphene composite uniformly loaded with Ag nano-particles(Ag NPs)is prepared through a facile Gamma ray irradiation method and assembled into self-supported film with layered structure(Ag-rGO film).Whe n such film is used as a lithium metal an ode host,the uncontrolled deposition is converted into a highly nucleation-induced process.On one hand,the Ag NPs distributed between the in terlayers of graphe ne can preferentially induce lithium nu cleati on and en able uniform deposition morphology of lithium between interlayers.On the other hand,the stable layered graphene structure can accommodate volume change,stabilize the interface between anode and electrolyte and inhibit dendrites formation.Therefore,the layered Ag-rGO film as anode host can reach a high Coulombic efficiency over 93.3% for 200 cycle(786 h)at a current density of 1 mA cm^(-2) for 2 mAh cm^(-2) in carbonate-based electrolyte.This work proposes a facile Gamma ray irradiation method to prepare metal/3D-skeleton structure as lithium anode host and demonstrates the potential to regulate the lithium metal deposition behaviors via manipulating the distribution of lithiophilic metal(e.g.Ag)in 3D frameworks.This may offer a practicable thinking for the subsequent design of the lithium metal anode.

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

YCOB晶体中辐射引起的BO_2-F^+心

YCOB,a member of the new crystal family of ReCOB (ReCOB=ReCa 4O(BO 3) 3,Re=La 3+ ,Nd 3+ ,Sm 3+ ,Gd 3+ ,Er 3+ ,Y 3+ ),has received mo re and more attentions in recent few years,because of its excellent nonlinear op tical (N LO) properties and a great promise as a laser host material.Unfortunately,liking most of nonlinear optical crystals,the laser induced damages were also created in the new crystal family when irradiated by ultraviolet laser.In this report we present our preliminary results of the investigation on the radiation induced damage in YCOB crystals.

Hot-carrier effects on irradiated deep submicron NMOSFET

We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.