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Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)
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作者 吴黎黎 吴锋民 《Communications in Theoretical Physics》 SCIE CAS CSCD 2011年第12期1130-1134,共5页
A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in... A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111).In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer,are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system.The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed. 展开更多
关键词 growth mode SURFACTANT re-exchange Monte Carlo simulation
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