OPTICAL CHARACTERIZATION OF TiO_2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.

Preparation and characterization of single(200)-oriented TiN thin films deposited by DC magnetron reactive sputtering

Single(200)-oriented TiN thin films were deposited on quartz substrate by direct current(DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 ℃.The effects of sputtering pressure and substrate temperature on the crystalline nature,morphology,electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction(XRD),atomic force microscopy(AFM),four-point resistivity test system and ultraviolet visible near-infrared(UV-Vis-NIR) spectroscopy,respectively.The results show that single(200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600 ℃ with the grain size increasing from 35.9 to 64.5 nm.The resistivity of the product is as low as95 μΩ·cm,and the value of the optical reflectance is above68 % in the near-infrared(NIR) range of 760-1500 nm.

Carbon-Doped Titanium Oxide Films by DC Reactive Magnetron Sputtering Using CO_2 and O_2 as Reactive Gas

CO2 and O2 were employed as reactive gases to fabricate carbon-doped titanium oxide films using DC reactive magnetron sputtering. Microstructure, composition and optical band gap of the films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and UV-visible spectrophotometer, respectively. The results showed that carbon-doped titanium monoxide films （C-TiO） with a carbon concentration of 5.8 at.% were obtained in an AffCO2 mixed atmosphere. However, carbon-doped futile and anatase （C-TiO2） with a carbon concentration of about 1.4 at.% were obtained in an Ar/CO2/O2 mixed atmosphere. The optical band gaps of C-TiO and C-TiO2 were about 2.6 and 2.9 eV, respectively. Both of them were narrower than that of pure TiO2 films. Films with narrowed optical band gap energy are promising in promoting their photo-catalytic activity.

SYNTHESIS AND THERMAL STABILITY OF NANOCOMPOSITE nc-TiN/a-TiB_2 THIN FILMS

Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.

Influence of Annealing Temperature on the Properties of TiO_2 Films Annealed by ex situ and in situ TEM

TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the （101）, （004）, （200） and （105） lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope.