The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under...The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.展开更多
Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was empl...Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.展开更多
A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-po...A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.展开更多
The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of th...The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.展开更多
目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、...目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、摩擦磨损试验机、划痕仪等评价方法,研究了峰值功率对薄膜组织结构和力学性能的影响。结果当峰值功率为52 k W时,靶材原子与离子的比值仅为5.4%,所生成氮化铬薄膜的晶粒尺寸较小,薄膜出现剥落的临界载荷为42 N,薄膜的磨损深度达到349 nm;当峰值功率提高到138 k W时,靶材原子与离子的比值为12.5%,在最大载荷100 N时,薄膜也未出现剥落,同时磨损深度仅为146 nm。结论高的峰值功率能够提高靶材原子离化率和离子对基片的轰击效应,使氮化铬薄膜晶粒重结晶而长大,消除部分应力,使薄膜表现出优良的耐磨性和韧性,因此提高靶材峰值功率可以提高氮化铬薄膜的力学性能。展开更多
基金supported by a 2-Year Research Grant of Pusan National University,Korea
文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.
文摘Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51301004 and U1330110the Guangdong Innovative and Entrepreneurial Research Team Program under Grant No 2013N080+1 种基金the Shenzhen Science and Technology Research Grant under Grant Nos JCYJ20140903102215536 and JCYJ20150828093127698the City University of Hong Kong Applied Research Grant under Grant No 9667104
文摘A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.
基金supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials(GFHIM)of the National Research Foundation of Korea(NRF)funded by the Ministry of Science,ICT&Future Planning(No.2013M3A6B1078874)funded by the National Nature Science Foundation of China(No.51301181)+2 种基金the Tianjin Key Research Program of Application Foundation and Advanced Technology(No.15JCZDJC39700)the Tianjin Science and Technology correspondent project(No.16JCTPJC49500)the Innovation Team Training Plan of Tianjin Universities and colleges(No.TD12-5043)
文摘The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.
文摘目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、摩擦磨损试验机、划痕仪等评价方法,研究了峰值功率对薄膜组织结构和力学性能的影响。结果当峰值功率为52 k W时,靶材原子与离子的比值仅为5.4%,所生成氮化铬薄膜的晶粒尺寸较小,薄膜出现剥落的临界载荷为42 N,薄膜的磨损深度达到349 nm;当峰值功率提高到138 k W时,靶材原子与离子的比值为12.5%,在最大载荷100 N时,薄膜也未出现剥落,同时磨损深度仅为146 nm。结论高的峰值功率能够提高靶材原子离化率和离子对基片的轰击效应,使氮化铬薄膜晶粒重结晶而长大,消除部分应力,使薄膜表现出优良的耐磨性和韧性,因此提高靶材峰值功率可以提高氮化铬薄膜的力学性能。
