The influence of radio frequency（RF） power on the properties of magnetron sputtered amorphous indium gallium zinc oxide（a-IGZO） thin films and the related thin-film transistor（TFT） devices is investigated compre...The influence of radio frequency（RF） power on the properties of magnetron sputtered amorphous indium gallium zinc oxide（a-IGZO） thin films and the related thin-film transistor（TFT） devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined.The results prove that the deposition rate sensitively depends on RF power.In addition,the carrier concentration increases from 0.91 x 1019 to 2.15 x 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin films.No evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO samples.On the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling effect.The rise in RF power can also affect the performance of a-IGZO TFTs,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films.展开更多
基金supported by the State Key Development Program for Basic Research of China(No.2013CB328803)the National Natural Science Foundation of China(No.61136004)
文摘The influence of radio frequency（RF） power on the properties of magnetron sputtered amorphous indium gallium zinc oxide（a-IGZO） thin films and the related thin-film transistor（TFT） devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined.The results prove that the deposition rate sensitively depends on RF power.In addition,the carrier concentration increases from 0.91 x 1019 to 2.15 x 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin films.No evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO samples.On the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling effect.The rise in RF power can also affect the performance of a-IGZO TFTs,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films.
