The microstructural evolutions under as-homogenized and as-deformed conditions and after the postdeformation annealing of AA6082 aluminum alloys with different Mn content(0.05 wt.%-1 wt.%)were studied by optical,scann...The microstructural evolutions under as-homogenized and as-deformed conditions and after the postdeformation annealing of AA6082 aluminum alloys with different Mn content(0.05 wt.%-1 wt.%)were studied by optical,scanning electron,and transmission electron microscopies.The results showed that the presence of a large amount ofα-Al(Mn,Fe)Si dispersoids induced by Mn addition significantly improved the recrystallization resistance.In the base alloy free of Mn,static recrystallization occurred after 2 h of annealing,and grain growth commenced after 4 h of annealing,whereas in Mn-containing alloys,the recovered grain structure was well-retained after even 8 h of annealing.The alloy with 0.5%Mn exhibited the best recrystallization resistance,and a further increase of the Mn levels to 1%resulted in a gradual reduction of the recrystallization resistance,the reason for which was that recrystallization occurred only in the dispersoid-free zones(DFZs)and the increased DFZ fraction with Mn content led to an increase in the recrystallization fraction.The variation in the dispersoid number density and a coarsening of dispersoids during annealing have a limited influence on the static recrystallization in Mn-containing alloys.展开更多
基金financially supported by the Natural Sciences and Engineering Research Council of Canada(No.CRDPJ 51465117)Rio Tinto Aluminum through the Research Chair in the Metallurgy of Aluminum Transformation at University of Quebec at Chicoutimi。
文摘The microstructural evolutions under as-homogenized and as-deformed conditions and after the postdeformation annealing of AA6082 aluminum alloys with different Mn content(0.05 wt.%-1 wt.%)were studied by optical,scanning electron,and transmission electron microscopies.The results showed that the presence of a large amount ofα-Al(Mn,Fe)Si dispersoids induced by Mn addition significantly improved the recrystallization resistance.In the base alloy free of Mn,static recrystallization occurred after 2 h of annealing,and grain growth commenced after 4 h of annealing,whereas in Mn-containing alloys,the recovered grain structure was well-retained after even 8 h of annealing.The alloy with 0.5%Mn exhibited the best recrystallization resistance,and a further increase of the Mn levels to 1%resulted in a gradual reduction of the recrystallization resistance,the reason for which was that recrystallization occurred only in the dispersoid-free zones(DFZs)and the increased DFZ fraction with Mn content led to an increase in the recrystallization fraction.The variation in the dispersoid number density and a coarsening of dispersoids during annealing have a limited influence on the static recrystallization in Mn-containing alloys.
