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A broadband regenerative frequency divider in InGaP/GaAs HBT technology 被引量:1
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作者 张金灿 张玉明 +4 位作者 吕红亮 张义门 刘敏 钟英辉 师政 《Journal of Semiconductors》 EI CAS CSCD 2014年第7期139-142,共4页
A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors (HBTs) frequency divider (RFD) is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead o... A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors (HBTs) frequency divider (RFD) is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2. 展开更多
关键词 regenerative frequency divider InGaP/GaAs HBT active loads BROADBAND
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