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Study on Surface States of Zinc Sulfide Electroluminescence Thin Films
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作者 LIU Zhaohong, WANG Yujiang, CHEN Mouzhi, SUN Shunong, LIU Ruitang ( Xiamen University, Xiamen 361005,CHN) 《Semiconductor Photonics and Technology》 CAS 1998年第4期253-255,F004,共4页
The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surf... The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surface states of the microcrystalline thin films is obtained.The transient EL spectroscopy of the thin film devices is measured and simulated by the formulae of different energy transfer mechanism.The results indicate that the formula of Gaussian line shape can fit well for description of transient EL process of zinc sulfide thin film doped with erbium.It shows that the surface states have important effect on the relaxation peaks during the decay process of EL for the thin film devices. 展开更多
关键词 El Gaussian formula relaxation peaks Surface state
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