Temperature-driven spin reorientation transition of magnetron sputtered nickel thin film

The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si （111） systems has been studied. The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature. The temperature dependence of mugnetoelastic, magneto-crystalline, and magnetostatic anisotropies determines the direction of the reorientation transition. The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.

Thermal control magnetic switching dominated by spin reorientation transition in Mn-doped PrFeO_(3) single crystals

Spin reorientation transition (SRT) has attracted substantial attention due to its important role in the ultrafast control of spins. However, the transition temperature is usually too low for its practical applications. Here, we demonstrate the ability to modulate the SRT temperature in PrFe_(1−x)Mn_(x)O_(3) single crystals from 196 K to 317 K across the room temperature by varying the Mn concentration. Interestingly, the Γ_(4) to Γ_(1) spin reorientation of the Mn-doped PrFeO_(3) is distinct from the Γ_(4) to Γ_(2) spin reorientation transition as in the parent material. Because of the coupling between rare-earth ions and transition-metal ions in determining the SRT temperature, the demonstrated control scheme of spin reorientation transition temperature by Mn-doping is expected to be used in temperature control magnetic switching devices and applicable to many other rare-earth orthoferrites.

Thickness-driven spin reorientation transition in ultrathin films

We review recent studies by different experimental means of ultrathin films,exhibiting thickness-driven spin reorientation transitions(SRTs).The stage is set by determining,via phenomenological thermodynamic description,of the relevant phase diagrams for the possible types of SRT with and without applied magnetic field.Suitable representation may be chosen such that best use is made of the linear character(under thickness variation) of the system's path in anisotropy space.The latter involves higher-order bulk and surface anisotropies in a substantial way.We examine sensitive experimental techniques for the detection and quantification of SRTs,such as hysteresis measurements with magneto-optical Kerr effect(MOKE),micromagnetic studies utilizing scanning electron microscopy with polarization analysis(SEMPA),photoemission electron microscopy(PEEM) and spin-polarized low-energy electron microscopy(SPLEEM) as well as ac magnetic susceptibility measurements via MOKE.Key issues are conclusively discussed including the identification of reliable experimental fingerprints about whether a given SRT proceeds via a phase of coexistence or via a cone(canted) phase.We demonstrate how the application of the general theoretical ideas to carefully designed measurements leads to the determination of the most important material parameters in any ultrathin-film SRT,namely,the surface(interface) magnetic anisotropy constants.The review concludes by our personal outline for future promising work on SRTs.

LOW ENERGY PATHS AND REORIENTATION OF SIDE-GROUPS OF POLYMERS DURING CONFORMATIONAL STATE TRANSITION

INTRODUCTION The conformational state transition of polymer chains relates to crystallization processes, migration ofthe chains in solution, fluctuation of the end-to-end distance of random coils, and the relaxation and phasetransitions of polymers. A description of the conformational state transition requires questions about; 1) howmany stable conformational states for a specific σ bond; 2) the barriers between the states; 3) the mechanismof the conformational transition; 4) any cooperative behavior during the transition. Flory and his coworkers

Magnetic phase transition and continuous spin switching in a high-entropy orthoferrite single crystal

Rare-earth orthoferrite REFeO_(3)(where RE is a rare-earth ion)is gaining interest.We created a high-entropy orthoferrite(Tm_(0.2)Nd_(0.2)Dy_(0.2)Y_(0.2)Yb_(0.2))FeO_(3)(HEOR)by doping five RE ions in equimolar ratios and grew the single crystal by optical floating zone method.It strongly tends to form a single-phase structure stabilized by high configurational entropy.In the low-temperature region(11.6‒14.4 K),the spin reorientation transition(SRT)ofΓ_(2)(F_(x),C_(y),G_(z))‒Γ_(24)‒Γ_(4)(G_(x),A_(y),F_(z))occurs.The weak ferromagnetic(FM)moment,which comes from the Fe sublattices distortion,rotates from the a-to c-axis.The two-step dynamic processes(Γ_(2)‒Γ_(24)‒Γ_(4))are identified by AC susceptibility measurements.SRT in HEOR can be tuned in the range of 50‒60000 Oe,which is an order of magnitude larger than that of orthoferrites in the peer system,making it a candidate for high-field spin sensing.Typical spin-switching(SSW)and continuous spin-switching(CSSW)effects occur under low magnetic fields due to the strong interactions between RE‒Fe sublattices.The CSSW effect is tunable between 20‒50 Oe,and hence,HEOR potentially can be applied to spin modulation devices.Furthermore,because of the strong anisotropy of magnetic entropy change()and refrigeration capacity(RC)based on its high configurational entropy,HEOR is expected to provide a novel approach for refrigeration by altering the orientations of the crystallographic axes(anisotropic configurational entropy).

Magnetization reversal of Fe ultrathin film on Cu(100)

The magnetization reversal of Fe/Cu（100） ultrathin films grown at room temperature is investigated by using an in situ magneto-optical Kerr effect polarimeter with a magnet that can rotate in a plane of incidence. There occur spin reorientation transitions from out-of-plane to in-plane magnetizations in 8 and 12 monolayers （ML） thick iron films. The coercive fields are observed to be proportional to the reciprocal of the cosine with respect to the easy axis, suggesting that the domain-wall displacement plays a main role in the magnetization reversal process.