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Design,fabrication and characterization of dual-channel real space transfer transistor
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作者 Weilian GUO Shilin ZHANG Xin YU 《Frontiers of Electrical and Electronic Engineering in China》 CSCD 2009年第2期234-238,共5页
In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristi... In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has.The negative resistance parameters can be varied by changing gate voltage(VGS).For example,the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V.The transconductance for IP(ΔIP=ΔVGS)is 0.3 mS.The parameters of VP,VV and threshold gate voltage(VT)for negative resistance characteristics arising are all smaller than the value reported in the literature.Therefore,this device is suitable for low dissipation power application. 展开更多
关键词 real space transfer transistor(RSTT) high speed compound three terminal function device three terminal negative resistance device hot electron device electron transfer device
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