The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a p...The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.展开更多
TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties...TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.展开更多
文摘The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
基金financially supported by the National Natural Science Foundation of China (No. 51171197)
文摘TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.
