Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells

The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15 Ω/. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters.

Current spreading in GaN-based light-emitting diodes

We have investigated the factors affecting the current spreading length（CSL） in GaN-based light-emitting diodes（LEDs） by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide（ITO） and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency（IQE） have been analyzed.The theoretical expression relating current density and the parameters（resistivity and thickness）of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.

Single-phase-to-ground Fault Detection with Distributed Parameters Analysis in Non-direct Grounded Systems

The fast and accurate detection of the single-phaseto-ground fault is of great significance for the reliability and safety of the power supply.In this paper,novel algorithms for distribution network protection were proposed with distributed parameters analysis in non-direct grounded systems.At first,novel generating mechanisms of zero-sequence voltage and residual current were proposed.Then the compositions of residue parameters,including residual current and residual admittances,were decomposed in detail.After that,an improved algorithm for a fault resistance calculation of a single phase-to-earth fault was also proposed,and the algorithm is much more convenient as it only needs to measure the variation of the zero-sequence voltage and does not need the prerequisites of the faulty feeder selection.Furthermore,the fault feeder can also be selected by an improved calculation algorithm of zero-sequence admittance of the faulty feeder,which cannot be affected by the asymmetry of the network.Theoretical analysis and the MATALB/Simulink simulation results demonstrate the effectiveness of the proposed algorithms.