A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is gr...A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.展开更多
In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on t...In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improve-ment on the performance and parameters of RTT.展开更多
文摘A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.
基金supported by the Ultra-High Speed ASIC Key Laboratory Foundation.
文摘In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improve-ment on the performance and parameters of RTT.
