FLOW CHARACTERISTICS OF WALLFLOW DIESEL PARTICULATE FILTER SYSTEM WITH REVERSE PULSE AIR REGENERATION

To simulate steady airflows inside of wall-flow diesel particulate filters （DPF） with different reverse blowing pipes collocation, a mathematical model of the flow in a DPF is established by an equivalent continuum approach. The experimental results agree well with the theoretical values calculated from the model. Simulation shows that the velocity and the pressure distribution of the filters in the regenerative process are key factors to the filter＇s regeneration. How to decrease the mal-distribution of the flow in the filter and how to achieve the better regenerative performance at the least cost of air consumption in the regenerative process are the ultimate goals of the study. Calculation and experiments show that the goals can be realized through adjusting the angle of two reverse blowing pipes and their relative location suitably.

Analytical model for reverse characteristics of 4H-SiC merged PN Schottky (MPS) diodes

A new analytical model for reverse characteristics of 4H-SiC merged PN Sehottky diodes （MPS or 3BS） is developed. To accurately calculate the reverse characteristics of the 4H SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel-Kramers-Brillouin （WKB） theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing （S） and P-junction depth （Xj） on the characteristics of 4H-SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.

NONLINEAR J-E CHARACTERISTICS IN THE ELECTRIC-THERMAL EQUILIBRIUM STATE FOR HIGH DENSITY POLYETHYLENE CONDUCTIVE COMPOSITES

The nonlinear J-E characteristics under self-heating equilibrium for conductive composites based on high density polyethylene were studied. The results show that there are identical conduction mechanisms under self-heating equilibrium for the composites with various initial resistivities determined by filler content or ambient temperature. The nonlinear conduction behavior was involved in the limited microstructure transformations of the conducting network induced by electrical field applied and the corresponding self-heating effect. A reversible thermal fuse (RTF) model was suggested to interpret the physical origin of the nonlinear J-E characteristics.

Geochemical characteristics of abiogenic alkane gases

Recently abiogenic alkanes have been found in various locations in the world and other celestial bodies. The chemical composition of abiogenic alkane gases varies widely. The content of methane is low and nearly no C2+ is found in the abiogenic alkane gases from fluid inclusions in volcanic rocks or hot springs in China. In the unsedimented submarine hydrothermal vent system C1/C2+ ratios are much greater than those for the thermogenic gases, mostly >800 and in some cases up to 8,000. In the Songliao Basin, China, C1/C2+ of some abiogenic gases are often less than 150. Abiogenic alkane gases which have been found in nature often have carbon isotopic reversal among C1–C4 alkanes (δ13C1>δ13C2>δ13C3>δ13C4), whereas both regular and reversed hydrogen isotope distribution pattern among C1–C4 alkanes have been reported. The δ13C of abiogenic methane is mainly greater than ?30‰ though laboratory synthesized methane can have δ13C as low as ?57‰, and its δD1 values vary widely and overlap with biogenic gases. High 3He/4He ratios often indicate the addition of mantle-derived helium and are related to abiogenic gases. However, some biogenic gases can also have high 3He/4He ratios up to 8. The CH4/3He end-member is often lower than 106 for abiogenic alkane gases while greater than 1013 for biogenic gases, and the values between these two end-members often reflect the mixing of biogenic and abiogenic gases.

Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark I-V-T Characteristics

Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (Is), the ideality factor (n), the series and the shunt resistances (Rs and Rsh), the effective and the zero bias barrier heights (ΦB and ΦB0), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (Vbi), together with the semiconductor doping concentration (NA or ND). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on ΦB, ΦB0, n and NA or ND parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.

Thin Emitter Structure Improved Turn-on Characteristics in RSD

The thin emitter structure was introduced into reversely switched dynistor(RSD) to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p+-emitter in a certain range, and when the doping concentration is extremely low, the decrease of the width of p+-emitter can obtain a low forward voltage drop. Thin emitter RSD chips were made by sintering Al on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.

变温条件下解析Preisach磁滞模型误差修正和特征参数辨识方法

温度升高会影响磁性材料的磁滞特性,从而改变电气设备的性能。目前解析Preisach模型无法对温度进行有效表征,导致损耗计算结果误差较大。为此,本文首先分析了基于Lorentzian函数的解析Preisach模型特征参数对磁滞回线形状参数的影响程度,如饱和磁通密度、矫顽力、剩磁等,研究了不同温度下模型参数和材料磁特性的变化。根据模型特征参数具有的磁滞回线形状相关性和温度相关性,引进温度系数来修正模型特征参数,构建变温条件下的解析Preisach模型,并给出了计及温度影响的模型参数辨识方法。最终实验测量纳米晶合金在变温条件下的极限磁滞回线,对多组实测值和修正后的解析Preisach模型计算值进行对比后,得出在饱和磁通密度、矫顽力和剩磁处修正模型结果的平均相对误差分别为0.15%、2.21%、5.76%,证明了该修正模型的准确性。

水泵水轮机S特性区能量损失及流动特性研究

为了调节电网的稳定性,抽水蓄能电站需要频繁启停和变换工况运行,导致水泵水轮机容易进入S特性区,机组振动增加,并网失败。本文以模型水泵水轮机为研究对象,采用熵产理论详细分析了S特性区不同工况下的能量损失规律,明确了熵产率分布与内部流动结构的关系。结果表明:S特性区内近飞逸工况总熵产最大,约为设计工况的5.1倍,脉动熵产占据的比例接近80%,随着流量的减小,转轮熵产占比逐渐降低,活动导叶和尾水管的熵产占比增加。小流量工况转轮进口靠近下环位置首先出现了明显的漩涡,导致了活动导叶出口和转轮进口的高熵产区,随着流量进一步减小,漩涡逐渐向上冠转移,并且切向速度增大,在转轮进口形成挡水环,阻碍水流进入转轮,在无叶区内出现了环状分布的高熵产区。反水泵工况,水流在低压边与逆时针旋转的叶片撞击,导致水流很难进入叶片内部,形成了大尺度的回流涡结构;双列叶栅内充满大量涡结构,导致活动导叶吸力面的熵产率增大,并且向固定导叶传播。

狂犬病病毒GX074株P-M^(S20F)突变体构建及其生长特性鉴定

【目的】明确狂犬病病毒(RABV)强毒株GX074的P蛋白和M蛋白第20位苯丙氨酸(Phe)替换至弱毒株r RC-HL的重组突变体在宿主细胞内的生长特性,为P蛋白和M蛋白转录复制机理研究提供理论依据。【方法】运用反向遗传技术以强毒株GX074的M蛋白第20位Phe替换弱毒株r RC-HL(GX074P)的M蛋白第20位丝氨酸(Ser),构建r RC-HL(GX074P-M^(S20F))突变体感染性c DNA克隆并拯救病毒。以重组突变体感染BSR/T7-9细胞,进行多步生长曲线测定,比较重组突变体与亲本毒株的生长能力,采用Western blotting检测N蛋白、P蛋白和M蛋白相对表达水平,利用实时荧光定量PCR检测N基因、P基因和M基因的相对表达量。【结果】经RT-PCR和测序鉴定,拯救的突变体r RC-HL(GX074P-M^(S20F))M蛋白第20位Ser成功替换为Phe。多步生长曲线测定结果显示,构建的重组突变体在感染24、48、72和96 h后,病毒滴度均高于亲本弱毒株r RC-HL和对照弱毒株r RC-HL(GX074PM1),平均约为亲本弱毒株r RC-HL的10倍。在蛋白表达水平上,r RC-HL(GX074P-M^(S20F))毒株在感染48 h后,N蛋白和M蛋白相对表达水平均极显著高于亲本弱毒株r RC-HL(P<0.01),说明强毒株GX074的P蛋白联合M蛋白第20位Phe替换至弱毒株r RC-HL后,增加了突变体N蛋白和M蛋白表达。感染24和48 h后,r RC-HL(GX074P-M^(S20F))毒株N基因、P基因和M基因的相对表达量均高于亲本弱毒株r RC-HL和对照弱毒株r RC-HL(GX074PM1)。【结论】强毒株GX074的M蛋白第20位Phe替换可提高病毒的增殖能力,同时增强病毒的复制与转录能力,M蛋白第20位Phe可能是影响病毒复制和转录的关键位点。

刮研表面法向接触特性研究

刮研对改善结合面接触特性具有显著效果,为深入研究刮研表面的法向接触特性,基于三维形貌仪得到不同精度的刮研和磨削表面形貌,并基于W-M函数模拟得到微织构形貌。逆向建模得到刮研表面、磨削表面和微织构表面,建立法向接触仿真模型。进行非线性接触仿真分析,并对比分析不同载荷作用下不同精度等级刮研表面、磨削表面和微织构表面的接触特性。分析结果表明,在载荷作用下,刮研、磨削以及模拟微织构表面首先在高点或微凸体发生接触并产生弹性变形,随着载荷的增加逐渐出现塑性变形,同时接触应力、形变以及接触面积也随之增大;当载荷为80 N时,Ⅰ级精度刮研表面真实接触面积大于精磨削表面,小于微织构表面,Ⅰ级精度刮研表面接触特性优于精磨削表面;在相同载荷下,Ⅰ级精度刮研表面总变形量小于精磨削和模拟微织构表面,其接触刚度大于精磨削和模拟微织构表面,刮研加工能够有效改善结合面接触特性。

基于电荷耦合效应的超级结JBS二极管的仿真分析

为提升现代单极型功率二极管的性能,进一步突破“硅极限”,通过加大传统JBS二极管中P+区结深,引入超级结结构以减薄芯片厚度,缓解传统单极型器件通态压降与反向阻断电压之间的矛盾,提高单位面积器件的导通电流密度。使用数值方法分析了超级结JBS二极管中P柱区浓度、N柱区宽度和N柱区浓度对正向导通特性以及反向阻断特性的影响,应用电场耦合效应理论分析了超级结JBS二极管的正向导通和反向阻断机理,设计了一款300 V的超级结JBS二极管。

耐盐菌生物强化耦合催化臭氧氧化处理渗滤液RO浓液及微生物特性分析

针对传统生物工艺处理RO浓液耐盐性差、处理效率低等问题,本研究利用耐盐菌强化厌氧/好氧(A/O)活性污泥耦合催化臭氧氧化工艺以提升有机物和总氮的去除,对比活性污泥、耐盐菌剂、活性污泥+耐盐菌剂的3种体系对RO浓液中污染物去除效果、处理前后有机物成分变化以及微生物特性差异.结果表明,较单独厌氧活性污泥和耐盐菌体系,厌氧强化体系有机氮的转化率分别提高了42%和37%;较单独好氧活性污泥和耐盐菌体系,好氧强化体系总氮去除率提升了37%和77%.气质联用分析显示,原水有机物经生物和臭氧氧化处理后促使一些不饱和键断裂,提高了难降解有机物的降解.处理后,水质指标可达《生活垃圾填埋场污染控制标准》表2标准.高通量测序结果表明,Flavobacterium可能在厌氧强化体系高盐条件下的氨化过程中发挥关键作用;而Truepera、Paracoccus是好氧强化体系高盐条件下总氮高效去除的关键功能菌属.功能基因预测结果显示,氨化基因npr是Flavobacterium菌属的关键基因,进一步证实测序结果推测;好氧强化体系中nap、nar、nir、nor反硝化基因的相对丰度均高于单独体系,揭示了强化体系总氮高效去除的机理.

自复位刚性滑板隔震支座水平力学性能研究

介绍了自复位刚性滑板隔震支座的基本构成和隔震原理,基于力学平衡原理,对自复位刚性滑板隔震支座进行了理论分析,推导了支座的等效刚度,构造了支座的滞回模型,探讨了支座的回复特性。使用电液伺服压剪试验机测试了支座在低周往复荷载作用下的滞回特性及回复能力。采用ABAQUS软件模拟支座在水平位移激励作用下的滞回特性及回复能力。结果表明:数值模拟结果和试验结果较吻合;自复位刚性滑板隔震支座的滞回性能良好,压力越大,滞回曲线越饱满;该支座往复加载过程的最大应力位于刚性滑块的中心位置,处于弹性范围内;该支座的自复位能力与滑动面摩擦系数呈反相关,与回复橡胶的剪切模量呈正相关。

基于YOLOv5-RF的糙米内部裂纹识别方法研究

[目的]为准确识别糙米内部裂纹,提出了一种基于改进YOLOv5l的糙米裂纹识别算法——YOLOv5-RF。[方法]使用深度卷积代替CBS(convolution+batch normalization+sigmoid linear unit)模块中的普通卷积构建出DWBS(depthwise convolution+batch normalization+sigmoid linear unit)模块,然后将DWBS模块堆叠成辅助骨干网络,再与原始的Darknet-53主干网络相结合形成基于DWBS模块的同级复合骨干网络,以提高糙米内部裂纹特征提取能力;在颈部网络使用逆向连接层来增强解码端特征的丰富性,用于提高解码端对糙米内部裂纹的识别能力;利用CBAM(convolutional block attention module)注意力模块调整SPPF(spatial pyramid pooling-fast)模块的通道注意力表达,通过构建一种SPPF模块与CBAM模块结合的网络结构来提高编码阶段的语义信息表达质量。[结果]所提出的YOLOv5-RF算法的平均准确率、召回率和准确率分别为94.01%、86.92%、90.85%,相比YOLOv5l算法分别提升了4.72%、6.23%、1.23%,但添加模块对模型检测速度的影响却很小。[结论]所提方法能够准确进行糙米内部裂纹的识别,可为稻谷爆腰率检测提供技术参考。

装配式轻钢复合墙体抗震性能试验研究

装配式轻钢复合墙体是一种集承重保温围护一体化的新型墙体。为研究轻钢复合墙体的抗震性能,以轻钢龙骨形式和填充材料类型为变化参数,设计了4个足尺试件进行低周往复荷载试验,得到了各试件的水平承载力、滞回特性和破坏特征,并分析了结构的抗侧刚度、耗能能力和水平承载力。结果表明:墙体轻钢骨架与内填材料协同工作性能良好,墙体的最终破坏表现为钢骨架强度破坏。水平龙骨由C型钢调整为双面扁钢可提高其水平承载力,但会降低墙体的延性和耗能能力;相较于内填泡沫混凝土填充墙体,内填聚苯颗粒泡沫混凝土墙体的水平承载力、刚度和耗能能力都有所降低,但延性有所提高。

基于多源数据的大气气溶胶时空分布特征和污染对比研究

为研究西北干旱地区大气气溶胶物理特性,以新疆乌鲁木齐、阿勒泰、和田三个城市为研究对象,通过采用反向轨迹、潜在贡献因子(PSCF)和浓度权重轨迹(CWT),以及气溶胶吸收Angstrom指数计算方法,基于多源数据开展了大气气溶胶时空分布特征研究分析。相较于沿海城市,和田地区PM污染物浓度最高,阿勒泰地区PM污染物浓度最低,新疆内陆地区的SO_(2)和CO污染程度更严重,而NO_(2)污染程度有所减轻,O_(3)污染程度出现波动状态。

不同膨胀潜势等级的膨胀土残余强度环剪试验研究

为探讨不同膨胀潜势等级的膨胀土残余强度与其成分特征的相关性,采用经自主改装的环剪仪开展Denver强膨胀土、荆门中、弱膨胀土环剪试验研究,并与排水反复直接剪切试验结果进行系统对比分析,在此基础上,用实测结果探讨残余强度与土成分特征相关关系的适用性。结果表明:(1)环剪试验测得Denver强膨胀土、荆门中、弱膨胀土有效残余强度内摩擦角分别为11.3°,12.3°,23.7°,比排水反复直接剪切试验测得的低1.7°~3.3°,并无应力相关性且具很好精度,更适于在工程中应用。(2)相关经验关系和公式存在高估或者低估膨胀土有效残余强度内摩擦角的情况。(3)残余强度与土成分特征间定性关系非常明确,上述经验关系对一般土性状况下残余强度预测较为准确;但在土成分复杂状况下,定量准确预测较为困难,这也反映出实测的重要性与必要性。

温度对换流变压器瞬态电场的影响分析

基于传统变压器的绝缘设计并未考虑油纸绝缘的非线性特性,采用有限元法将电磁场、温度场等多物理场进行耦合仿真计算,重点研究油纸复合绝缘的电导率随温度非线性变化时,换流变压器阀侧绕组端部暂态电场分布的规律和特征,以及油、纸板电导率比值对阀侧电场的影响。结果表明:考虑温度电导率非线性特性时,换流变压器阀侧端部的电场分布更加集中,畸变现象更明显,且随着电导率比值的增大,阀侧绕组端部的等位线分布越来越密集,高场强值集中在阀侧绕组端部绝缘纸板之间的油隙中。所提研究为变压器绝缘设计提供技术支持。

基于AMESim的逆向作用式减压阀动态特性的研究

减压阀输出压力的稳定性及输出压力达到稳定的快速响应是判别减压阀优劣的重要性能指标。基于某型号逆向作用式减压阀的结构及工作原理,应用AMESim数值仿真软件构建减压阀各个组成部件的仿真分析模型,研究减压阀压力流量特性及其动态特性;通过搭建减压阀工作测试平台对比验证,验证了仿真模型的正确性;通过改变模型中不同基本参数的值,研究了不同结构参数对减压阀动态特性的影响,为同类型减压阀的设计和参数优化提供了理论支持。