A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to ...A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. More- over, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.展开更多
A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surf...A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.展开更多
基金Project supported by the National Science and Technology Major Project, China （Grant No. 2011ZX02504-003）, the National Natural Science Foundation of China （Grant No. 61076082）, and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011 J024）.
文摘A novel reverse-conducting insulated-gate bipolar transistor （RC-IGBT） featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. More- over, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.
基金Project supported by the National Natural Science Foundation of China(Grant No.61604027)the Basic and Advanced Technology Research Project of Chongqing Municipality,China(Grant No.cstc2016jcyj A1923)+3 种基金the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission,China(Grant No.KJ1500404)the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications,China(Grant Nos.A2015-50 and A2015-52)the Chongqing Key Laboratory Improvement Plan,China(Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology)(Grant No.cstc2014pt-sy40001)the University Innovation Team Construction Plan Funding Project of Chongqing,China(Architecture and Core Technologies of Smart Medical System)(Grant No.CXTDG201602009)
文摘A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.
