An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InA...An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laserchips have been investigated. The results show that, by measuring andanalyzing the I- V characteristics under appropriate pulse drivingconditions at different has sink Temperatures, the thermal resistanceof the laser diodes could be easily deduced. The driving Current andjunction voltage waveforms of the laser ships under different pulsedriving Conditions are also discussed.展开更多
文摘An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laserchips have been investigated. The results show that, by measuring andanalyzing the I- V characteristics under appropriate pulse drivingconditions at different has sink Temperatures, the thermal resistanceof the laser diodes could be easily deduced. The driving Current andjunction voltage waveforms of the laser ships under different pulsedriving Conditions are also discussed.
