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Room temperature NO2-sensing properties of hexagonal tungsten oxide nanorods 被引量:1
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作者 武雅乔 胡明 田玉明 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期114-120,共7页
Hexagonal WO_3 nanorods were synthesized through a facile hydrothermal method. The nanorods properties were investigated by scanning electron microscope(SEM), transmission electron microscope(TEM), energy dispersi... Hexagonal WO_3 nanorods were synthesized through a facile hydrothermal method. The nanorods properties were investigated by scanning electron microscope(SEM), transmission electron microscope(TEM), energy dispersive spectroscopy(EDS), and x-ray diffraction(XRD). The NO_2-sensing performances in terms of sensor response, response/recovery times and repeatability at room temperature were optimized by varying the heat treatment temperature of WO_3 nanorods. The optimized NO_2sensor(400-℃-annealed WO_3 nanorods) showed an ultra-high sensor response of 3.2 and short response time of 1 s to 5-ppm NO_2. In addition, the 400-℃-annealed sample exhibited more stable repeatability.Furthermore, dynamic responses measurements of annealed samples showed that all the annealed WO_3 nanorods sensors presented p-type behaviors. We suppose the p-type behavior of the WO_3 nanorods sensor to be that an inversion layer is formed in the space charge layer when the sensor is exposed to NO_2 at room temperature.Therefore, the 400-℃-annealed WO_3 nanorods sensor is one of the most energy conservation candidates to detect NO_2 at room temperature. 展开更多
关键词 WO_3 nanorods thermal treatment NO_2 gas sensor room temperature
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Nano-WO_3 film modified macro-porous silicon(MPS) gas sensor
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作者 孙鹏 胡明 +1 位作者 李明达 马双云 《Journal of Semiconductors》 EI CAS CSCD 2012年第5期83-87,共5页
We prepared macro-porous silicon(MPS) by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon.Then,nano-WO_3 films were deposited on MPS layers by DC facing target reac... We prepared macro-porous silicon(MPS) by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon.Then,nano-WO_3 films were deposited on MPS layers by DC facing target reactive magnetron sputtering.The morphologies of the MPS and WO_3/MPS samples were investigated by using a field emission scanning electron microscope.The crystallization of WO_3 and the valence of the W in the WO_3/MPS sample were characterized by X-ray diffraction and X-ray photoelectron spectroscopy,respectively. The gas sensing properties of MPS and WO_3/MPS gas sensors were thoroughly measured at room temperature. It can be concluded that:the WO_3/MPS gas sensor shows the gas sensing properties of a P-type semiconductor gas sensor.The WO_3/MPS gas sensor exhibits good recovery characteristics and repeatability to 1 ppm NO_2.The addition of WO_3 can enhance the sensitivity of MPS to NO_2.The long-term stability of a WO_3/MPS gas sensor is better than that of an MPS gas sensor.The sensitivity of the WO_3/MPS gas sensor to NO_2 is higher than that to NH_3 and C_2H_5OH.The selectivity of the MPS to NO_2 is modified by deposited nano-WO_3 film. 展开更多
关键词 MPS WO_3/MPS gas sensor gas sensing properties room temperature
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